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1. WO2007149210 - Injection de gaz d'attaque chimique pour une amélioration de l'uniformité des dimensions critiques

Numéro de publication WO/2007/149210
Date de publication 27.12.2007
N° de la demande internationale PCT/US2007/013159
Date du dépôt international 05.06.2007
CIB
H01L 21/02 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
CPC
H01J 2237/334
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
H01J 37/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/32137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
32137of silicon-containing layers
H01L 21/6708
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67075for wet etching
6708using mainly spraying means, e.g. nozzles
Déposants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538-6470, US (AllExceptUS)
  • SINGH, Harmeet [IN/US]; US (UsOnly)
  • COOPERBERG, David [US/US]; US (UsOnly)
  • VAHEDI, Vahid [US/US]; US (UsOnly)
Inventeurs
  • SINGH, Harmeet; US
  • COOPERBERG, David; US
  • VAHEDI, Vahid; US
Mandataires
  • SKIFF, Peter, K.; BUCHANAN INGERSOLL & ROONEY PC P.O. Box 1404 Alexandria, Virginia 22313-1404, US
Données relatives à la priorité
11/455,67120.06.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) GAS INJECTION TO ETCH A SEMICONDUCTOR SUBSTRATE UNIFORMLY
(FR) Injection de gaz d'attaque chimique pour une amélioration de l'uniformité des dimensions critiques
Abrégé
(EN)
A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
(FR)
La présente invention concerne un procédé d'attaque chimique d'un substrat semi-conducteur ayant une uniformité améliorée des dimensions critiques et qui comprend le maintien d'un substrat semi-conducteur sur un support de substrat dans une chambre d'attaque chimique au plasma à couplage inductif; l'introduction d'un premier gaz d'attaque chimique vers une région centrale sur le substrat semi-conducteur; l'introduction d'un second gaz comprenant au moins un gaz contenant du silicium vers une région périphérique sur le substrat semi-conducteur entourant la région centrale, une concentration en silicium dans le second gaz étant supérieure à une concentration en silicium dans le premier gaz d'attaque chimique; la génération d'un plasma à partir du premier gaz d'attaque chimique et du second gaz; et l'attaque chimique au plasma d'une surface exposée du substrat semi-conducteur.
Également publié en tant que
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