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1. WO2007139681 - MÉTALLISATION DE CONTACT DE MOSFET DE PUISSANCE

Numéro de publication WO/2007/139681
Date de publication 06.12.2007
N° de la demande internationale PCT/US2007/011377
Date du dépôt international 11.05.2007
CIB
H01L 21/28 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
28Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes H01L21/20-H01L21/268177
CPC
H01L 21/76838
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
H01L 21/7684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
7684Smoothing; Planarisation
H01L 23/53223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53214the principal metal being aluminium
53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
H01L 23/53266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53257the principal metal being a refractory metal
53266Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
H01L 29/7813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7813with trench gate electrode, e.g. UMOS transistors
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Déposants
  • VISHAY-SILICONIX [US/US]; 2201 Laurelwood Road Santa Clara, California 95054, US (AllExceptUS)
  • WONG, Ronald [US/US]; US (UsOnly)
  • OI, Jason; null (UsOnly)
  • TERRILL, Kyle [US/US]; US (UsOnly)
  • CHEN, Kuo-In [US/US]; US (UsOnly)
Inventeurs
  • WONG, Ronald; US
  • OI, Jason; null
  • TERRILL, Kyle; US
  • CHEN, Kuo-In; US
Mandataires
  • GALLENSON, Mavis, S. ; Ladas & Parry LLP 5670 Wilshire Boulevard, Ste. 2100 Los Angeles, CA 90036, US
Données relatives à la priorité
11/799,88902.05.2007US
60/799,86812.05.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) POWER MOSFET CONTACT METALLIZATION
(FR) MÉTALLISATION DE CONTACT DE MOSFET DE PUISSANCE
Abrégé
(EN)
A structure preferably includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact preferably includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector preferably includes aluminum. A surface of the insulator and a surface of the electrical contact preferably form a substantially even surface.
(FR)
La structure selon l'invention comprend de préférence un dispositif semi-conducteur disposé dans un substrat ; un isolant adjacent au dispositif semi-conducteur ; un contact électrique couplé électriquement au dispositif semi-conducteur, le contact électrique comprenant de préférence du tungstène ; et un connecteur électrique couplé au contact électrique, le connecteur électrique comprenant de préférence de l'aluminium. Une surface de l'isolant et une surface du contact électrique constituent de préférence une surface sensiblement uniforme.
Dernières données bibliographiques dont dispose le Bureau international