Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

1. WO2007139255 - PIXEL ACTIF DE CAPTEUR D'IMAGES ET SON PROCÉDÉ DE DÉTECTION DE SIGNAUX

Numéro de publication WO/2007/139255
Date de publication 06.12.2007
N° de la demande internationale PCT/KR2006/004175
Date du dépôt international 16.10.2006
CIB
H04N 5/335 2011.01
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
NTRANSMISSION D'IMAGES, p.ex. TÉLÉVISION
5Détails des systèmes de télévision
30Transformation d'informations lumineuses ou analogues en informations électriques
335utilisant des capteurs d'images à l'état solide  
CPC
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H04N 3/155
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
3Scanning details of television systems; Combination thereof with generation of supply voltages
10by means not exclusively optical-mechanical
14by means of electrically scanned solid-state devices
15for picture signal generation
155Control of the image-sensor operation, e.g. image processing within the image-sensor
H04N 5/335
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
H04N 5/3559
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
355Control of the dynamic range
3559by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 5/37452
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
37452comprising additional storage means
Déposants
  • PIXELPLUS CO., LTD. [KR/KR]; #505 Intellige 1, Kins Tower, 25-1 Jeongja-dong Bundang-gu, Seongnam-si Gyeonggi-do 463-811, KR (AllExceptUS)
  • LEE, Jawoong [KR/KR]; KR (UsOnly)
  • LEE, Sungsu [KR/KR]; KR (UsOnly)
  • SHIN, Jungsoon [KR/KR]; KR (UsOnly)
Inventeurs
  • LEE, Jawoong; KR
  • LEE, Sungsu; KR
  • SHIN, Jungsoon; KR
Mandataires
  • BAE, KIM & LEE IP GROUP; Hankook Tire Bldg. 647-15 Yoksam-dong Gangnam-gu Seoul 135-723, KR
Données relatives à la priorité
10-2006-004708225.05.2006KR
Langue de publication anglais (EN)
Langue de dépôt coréen (KO)
États désignés
Titre
(EN) IMAGE SENSOR ACTIVE PIXEL AND METHOD FOR SENSING SIGNAL THEREOF
(FR) PIXEL ACTIF DE CAPTEUR D'IMAGES ET SON PROCÉDÉ DE DÉTECTION DE SIGNAUX
Abrégé
(EN)
A CMOS image sensor active pixel which comprises a multi-functional charge sensing unit and a method for sensing a signal thereof. Wherein a voltage of a n-type diffusion region of a charge sensing node is highly boosted even in a low driving voltage, and a signal voltage is coupled out with a coupling capacitor without forming ohmic contact in the n-type diffusion region of the charge sensing node.
(FR)
L'invention concerne un pixel actif de capteur d'images CMOS qui comprend une unité de détection de charge multifonctionnelle et un procédé de détection de son signal. Une tension d'une zone de diffusion de type n d'un noeud de détection de charge est hautement amplifiée même en tension de commande faible et une tension de signal est couplée avec un condensateur de couplage sans former un contact ohmique dans la zone de diffusion de type n du neoud de détection de charge.
Dernières données bibliographiques dont dispose le Bureau international