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1. WO2007108055 - DISPOSITIF A SEMI-CONDUCTEURS COMPOSE ET SON PROCEDE DE PRODUCTION

Numéro de publication WO/2007/108055
Date de publication 27.09.2007
N° de la demande internationale PCT/JP2006/305265
Date du dépôt international 16.03.2006
CIB
H01L 29/80 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
772Transistors à effet de champ
80l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse
CPC
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
205in different semiconductor regions ; , e.g. heterojunctions
H01L 29/267
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
26including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 ; , e.g. alloys
267in different semiconductor regions ; , e.g. heterojunctions
H01L 29/518
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
518the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
H01L 29/66462
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66446with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
66462with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Déposants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 吉川 俊英 KIKKAWA, Toshihide [JP]/[JP] (UsOnly)
Inventeurs
  • 吉川 俊英 KIKKAWA, Toshihide
Mandataires
  • 國分 孝悦 KOKUBUN, Takayoshi
Données relatives à la priorité
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
(FR) DISPOSITIF A SEMI-CONDUCTEURS COMPOSE ET SON PROCEDE DE PRODUCTION
(JA) 化合物半導体装置及びその製造方法
Abrégé
(EN)
On SiC substrate (1), there are sequentially superimposed AlN layer (2), GaN buffer layer (3), non-doped AlGaN layer (4a), n-type AlGaN layer (4b), n-type GaN layer (5), non-doped AlN layer (6) and SiN layer (7). The non-doped AlN layer (6) and SiN layer (7) are provided with at least three apertures, and source electrode (8a), drain electrode (8b) and gate electrode (19) are implanted in these apertures.
(FR)
La présente invention concerne, sur un substrat de SiC (1) et superposées de manière séquentielle, une couche d'AlN (2), une couche tampon de GaN (3), une couche d'AlGaN non dopée (4a), une couche d'AlGaN de type n (4b), une couche de GaN de type n (5), une couche d'AlN non dopée (6) et une couche de SiN (7). La couche d'AlN non dopée (6) et la couche de SiN (7) sont prévues avec au moins trois ouvertures et l'électrode source (8a), l'électrode drain (8b) et l'électrode de grille (19) sont implantées dans ces ouvertures.
(JA)
not available
Également publié en tant que
US12210442
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