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1. WO2007106756 - CELLULE SOLAIRE HAUTE EFFICACITÉ À TROUS D'INTERCONNEXION ISOLÉS

Numéro de publication WO/2007/106756
Date de publication 20.09.2007
N° de la demande internationale PCT/US2007/063744
Date du dépôt international 10.03.2007
CIB
H01L 31/042 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
042Modules PV ou matrices de cellules PV individuelles
CPC
H01L 27/3204
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3204OLEDs electrically connected in series
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/02245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
02245for metallisation wrap-through [MWT] type solar cells
H01L 31/0392
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
H01L 31/03923
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03923including AIBIIICVI compound materials, e.g. CIS, CIGS
H01L 31/03925
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03925including AIIBVI compound materials, e.g. CdTe, CdS
Déposants
  • NANOSOLAR, INC. [US]/[US] (AllExceptUS)
  • LOCHUN, Darren [GB]/[US] (UsOnly)
  • KAO, Sam [US]/[US] (UsOnly)
  • SHEATS, James, R. [US]/[US] (UsOnly)
  • MILLER, Gregory, A. [US]/[US] (UsOnly)
Inventeurs
  • LOCHUN, Darren
  • KAO, Sam
  • SHEATS, James, R.
  • MILLER, Gregory, A.
Mandataires
  • TUNG, Hao, Y.
Données relatives à la priorité
11/278,64504.04.2006US
60/781,16510.03.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) HIGH-EFFICIENCY SOLAR CELL WITH INSULATED VIAS
(FR) CELLULE SOLAIRE HAUTE EFFICACITÉ À TROUS D'INTERCONNEXION ISOLÉS
Abrégé
(EN)
Methods and devices are provided for high-efficiency solar cells. In one embodiment, the device comprises of a solar cell having a high efficiency backside electrode configuration, wherein the solar cell comprises of: at least one transparent conductor, a photovoltaic layer, at least one bottom electrode, and at least one backside electrode. The device may include a plurality of electrical conduction fingers mounted to the transparent conductor in the solar cell. The device may include a plurality of filled vias coupled to the electrical conduction fingers, wherein the vias extend through the transparent conductor, the photovoltaic layer, and the bottom electrode, wherein the vias have a conductive core that conducts charge from the transparent conductor to the backside electrode. The via insulating layer may separate the conductive core in each via from the bottom electrode, wherein the insulating layer may be formed by a variety of techniques such as but not limited to aerosol coating of the via.
(FR)
La présente invention concerne des procédés et des dispositifs pour des cellules solaires à haute efficacité. Dans un mode de réalisation, le dispositif comporte une cellule solaire présentant une configuration d'électrodes arrière à haute efficacité, ladite cellule solaire comportant: au moins un conducteur transparent, une couche photovoltaïque, au moins une électrode inférieure, et au moins une électrode arrière. Le dispositif peut comporter une pluralité de doigts conducteurs d'électricité montés au conducteur transparent dans la cellule solaire. Le dispositif peut inclure une pluralité de trous d'interconnexion remplis couplés aux doigts conducteurs d'électricité, lesdits trous d'interconnexion s'étendant à travers le conducteur transparent, la couche photovoltaïque, et l'électrode inférieure. Les trous d'interconnexions présentent un noyau conducteur qui conduit une charge depuis le conducteur transparent vers l'électrode arrière. La couche d'isolation de trous d'interconnexion peut séparer le noyau conducteur dans chaque trou d'interconnexion de l'électrode arrière, ladite couche d'isolation pouvant être formée par diverses techniques comprenant, entre autres, le revêtement par aérosol du trou d'interconnexion.
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