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1. (WO2005069371) STRUCTURE DE DECHARGE ELECTROSTATIQUE A HAUTE ENERGIE ET PROCEDE
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

Claims
We Claim:

1. A semiconductor ESD structure comprising:
a semiconductor substrate of a first conductivity .type having a first region of a second conductivity type and a first dopant concentration;
a buried region of the second conductivity type formed in the first region;
a second region of the first conductivity type formed in the first region and contacting the buried layer;
a third region of the first conductivity, type formed in the first region and contacting the buried layer;
a first isolation region formed in the first region between the second and third regions;
a first pair of oppositely doped regions formed in the second region; and
a second pair of oppositely doped regions formed in the third region.

2. The structure of claim 1 wherein the second and third regions and the first isolation region form concentric rings in the first region.

3. The structure of claim 1 wherein the first isolation region comprises a diffused region having a second dopant concentration greater than the first dopant concentration.

4. The structure of claim 3 wherein the first isolation region has a surface dopant concentration of greater than about l.OxlO18 atoms/cm3.

5. The structure of claim 1 whereon one of the first pair of oppositely doped regions and the second pair of oppositely doped regions is shorted together to provide a reduced
capacitance device.

6. A semiconductor device comprising: a first ring region of a first conductivity type formed in a layer semiconductor material of a second conductivity type and having a first doping concentration;
a second ring region of the first conductivity type formed in the layer of semiconductor material;
a first doped region of the second conductivity type within the layer of semiconductor material and coupled to the first and second ring regions; and
a third ring region comprising an isolation region between the first and second ring regions.

7. The device of claim 6 wherein the third ring contacts the first doped region.

8. A method for forming a semiconductor device
comprising the steps of:
forming a first ring region of a first conductivity type in a layer semiconductor material of a second conductivity type and having a first doping concentration;
forming a second ring region of the first conductivity type in the layer of semiconductor material;
forming a first doped region of the second conductivity type within the layer of semiconductor material and coupled to the first and second ring regions; and
forming a third ring region of the second conductivity type between the first and second ring regions, wherein the third ring region has a second doping concentration greater than the first doping concentration.

9. The method of claim 8 wherein the step of forming the third ring includes forming the third ring coupled to the first doped region.

10. The method of claim 8 further comprising the steps of:
forming a second doped region of the first conductivity type in the first ring region;
forming a third doped region of the second conductivity type in the first ring region;
forming a fourth doped region of the first conductivity type in the second ring region; and
forming a fifth doped region of the second conductivity type in the second ring region.