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1. WO2005008710 - EMETTEUR POUR INSTRUMENTS INTEGRES

Numéro de publication WO/2005/008710
Date de publication 27.01.2005
N° de la demande internationale PCT/RU2004/000098
Date du dépôt international 16.03.2004
CIB
H01J 19/02 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
JTUBES À DÉCHARGE ÉLECTRIQUE OU LAMPES À DÉCHARGE ÉLECTRIQUE
19Détails des tubes à vide des types couverts par le groupe H01J21/86
02Electrodes émettrices d'électrons; Cathodes
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01J 1/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
1Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
02Main electrodes
30Cold cathodes, e.g. field-emissive cathode
304Field-emissive cathodes
H01J 2201/3165
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2201Electrodes common to discharge tubes
30Cold cathodes
316having an electric field parallel to the surface thereof, e.g. thin film cathodes
3165Surface conduction emission type cathodes
H01L 51/0048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
0048Carbon nanotubes
H01L 51/0504
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
H01L 51/0575
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0575the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Déposants
  • STATE FEDERAL UNITARY ENTERPRISE SCIENTIFIC RESEARCH INSTITUTE OF PHYSICAL PROBLEMS 'NAMETED AFTER F.V. LUKIN' [RU/RU]; Zelenograd, proezd 4806-6 Moscow, 124460, RU (AllExceptUS)
  • GAVRILOV, Sergey Aleksandrovich [RU/RU]; RU (UsOnly)
  • ILICHEV, Eduard Anatolevich [RU/RU]; RU (UsOnly)
  • POLTORATSKIY, Eduard Alekseevich [RU/RU]; RU (UsOnly)
  • RICHKOV, Gennady Sergeevich [RU/RU]; RU (UsOnly)
Inventeurs
  • GAVRILOV, Sergey Aleksandrovich; RU
  • ILICHEV, Eduard Anatolevich; RU
  • POLTORATSKIY, Eduard Alekseevich; RU
  • RICHKOV, Gennady Sergeevich; RU
Données relatives à la priorité
200312296921.07.2003RU
Langue de publication russe (RU)
Langue de dépôt russe (RU)
États désignés
Titre
(EN) EMITTER FOR INTEGRATED CIRCUIT DEVICES
(FR) EMETTEUR POUR INSTRUMENTS INTEGRES
Abrégé
(EN)
The invention relates to a micro and nanoelectronic engineering, more precisely to an emitter structural design (including an emissive emitter) for active micro and nanoelectronic components and for diodes and transistors. The aim of said invention is to develop a planar emitter. The inventive structural design makes it possible to develop planar emissive triodes and diodes, i.e. the active components, whose emitters and anodes are arranged on the same plane. The aim is achieved by the fact that the inventive emitter for integrated circuit devices consists of a base which is arranged on a substrate and made of a catalytic material layer provided with carbon nanotubes which are formed thereon in a perpendicular direction with respect to the emitter base, the end of the catalytic material layer arranged between non-catalytic material layers being used as the emitter base. Such a structural design makes it possible to produce a blade-shaped planar emitter whose base thickness is adjustable within a range of 1-50 nm by measuring the catalytic layer thickness and which consists of nanotubes whose diameters are equal to or less than the thickness of the base thereof. In one of embodiments of said invention, the first and foremost, the catalytic layer is provided with a vanadium layer applied thereto, and afterwards with a silicon dioxide layer which makes it possible to form an electron flow control gate. Said structural design of the emitter makes it possible to create nanoelectronic integrated circuits wherein the triode and diode spacing density ranges from 109 to 1013 cm 2, that is several orders higher than the performance capabilities of modern microelectronics
(FR)
Cette invention relève du domaine de la microélectronique et de la nanoélectronique et concerne plus spécifiquement la structure d'un émetteur (tel qu'un émetteur émissif) destiné à des composants actifs microélectroniques et nanoélectroniques, tels que des diodes et des transistors. Cette invention vise à élaborer un émetteur plan. Ce type de structure permet d'élaborer des triodes et des diodes émissives planes, autrement dit des composants actifs, dont les émetteurs et les anodes sont disposés dans le même plan. Pour ce faire, l'émetteur pour instruments intégrés de cette invention comprend une base d'émetteur disposée sur un substrat et composée d'une couche de matériau catalytique qui comporte, sur sa surface, des nanotubes de carbone formés de façon qu'ils soient perpendiculaires à la surface de la base de l'émetteur, une extrémité de la couche de matériau catalytique située entre des couches de matériau non catalytique servant de base d'émetteur. Cette structure permet de créer un émetteur plan en forme de 'lame' qui comprend une base dont l'épaisseur est modulable dans une gamme comprise entre 1 et 50 nm grâce à la variation de l'épaisseur de la couche catalytique et qui se compose de nanotubes dont le diamètre n'excède pas l'épaisseur de la base. Une variante de cette invention consiste à appliquer sur la couche catalytique une couche de vanadium puis une couche de dioxyde de silicium, ce qui permet de former une gâchette de commande de flux électronique. La structure de l'émetteur de cette invention permet de créer des circuits intégrés nanoélectroniques présentant une densité d'implantation de triodes et de diodes comprise entre 109 et 1013 cm-2, ce qui est supérieur de plusieurs ordres de grandeur aux composants microélectroniques actuels.
Dernières données bibliographiques dont dispose le Bureau international