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1. WO2005008643 - SUPPORT DE STOCKAGE DE DONNEES REENREGISTRABLE UTILISANT UNE BARRIERE DE CONDUCTION

Numéro de publication WO/2005/008643
Date de publication 27.01.2005
N° de la demande internationale PCT/US2004/020674
Date du dépôt international 25.06.2004
CIB
G11C 16/02 2006.01
GPHYSIQUE
11ENREGISTREMENT DE L'INFORMATION
CMÉMOIRES STATIQUES
16Mémoires mortes programmables effaçables
02programmables électriquement
H01L 45/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
45Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
CPC
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
H01L 27/2472
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
2472the switching components having a common active material layer
H01L 45/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
06based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H01L 45/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
H01L 45/1213
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
1213Radiation or particle beam assisted switching devices, e.g. optically controlled devices
H01L 45/1233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
122Device geometry
1233adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
Déposants
  • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company Intellectual Property Administration 20555 S.H. 249 Houston, TX 77070, US (AllExceptUS)
  • YEH, Bao-Sung, Bruce [US/US]; US (UsOnly)
  • REGAN, Michael, J. [US/US]; US (UsOnly)
  • GIBSON, Gary, A. [US/US]; US (UsOnly)
Inventeurs
  • YEH, Bao-Sung, Bruce; US
  • REGAN, Michael, J.; US
  • GIBSON, Gary, A.; US
Mandataires
  • WADE, Matthew, L. ; Hewlett-Packard Company Intellectual Property Administration P.O. Box 272400 Mail Stop 35 Fort Collins, CO 80527-2400, US
Données relatives à la priorité
10/617,90010.07.2003US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) RE-RECORDABLE DATA STORAGE MEDIUM UTILIZING CONDUCTION BARRIER
(FR) SUPPORT DE STOCKAGE DE DONNEES REENREGISTRABLE UTILISANT UNE BARRIERE DE CONDUCTION
Abrégé
(EN)
A re-recordable data storage medium (100) is disclosed. The medium in one embodiment includes a phase-changeable layer (106) and an intermediate layer (104). A junction between the intermediate layer and another layer of the medium provides a conduction barrier under no illumination that is substantially diminished under illumination of the regions of the phase-changeable layer that are in the appropriate phase.
(FR)
L'invention concerne un support de stockage de données réenregistrable (100) qui, dans un mode de réalisation, comprend une couche à changement de phase (106) et une couche intermédiaire (104). Une jonction entre la couche intermédiaire et une autre couche du support fournit une barrière de conduction non éclairée, qui est sensiblement diminué lorsque qu'un éclairement atteint les régions de la couche à changement de phase qui sont dans la phase appropriée.
Dernières données bibliographiques dont dispose le Bureau international