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1. WO2005006429 - ENSEMBLE CIRCUIT INTEGRE A CONTACTS DE BASSE IMPEDANCE ET PROCEDE DE FABRICATION

Numéro de publication WO/2005/006429
Date de publication 20.01.2005
N° de la demande internationale PCT/EP2004/051004
Date du dépôt international 02.06.2004
Demande présentée en vertu du Chapitre 2 06.05.2005
CIB
H01L 21/60 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
50Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes H01L21/06-H01L21/326185
60Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
CPC
H01L 21/28518
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28518the conductive layers comprising silicides
H01L 29/41725
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
H01L 29/41783
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
41775characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
41783Raised source or drain electrodes self aligned with the gate
H01L 29/665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
665using self aligned silicidation, i.e. salicide
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
Y10S 438/964
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
438Semiconductor device manufacturing: process
964Roughened surface
Déposants
  • INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Str. 53 81669 München, DE (AllExceptUS)
  • HOFMANN, Franz [DE/DE]; DE (UsOnly)
  • LUYKEN, Richard Johannes [DE/DE]; DE (UsOnly)
  • RÖSNER, Wolfgang [DE/DE]; DE (UsOnly)
  • SPECHT, Michael [DE/DE]; DE (UsOnly)
Inventeurs
  • HOFMANN, Franz; DE
  • LUYKEN, Richard Johannes; DE
  • RÖSNER, Wolfgang; DE
  • SPECHT, Michael; DE
Mandataires
  • KINDERMANN, Peter ; Patentanwälte Kindermann P.O. Box 100234 85593 Baldham, DE
Données relatives à la priorité
10330730.308.07.2003DE
Langue de publication allemand (DE)
Langue de dépôt allemand (DE)
États désignés
Titre
(DE) INTEGRIERTE SCHALTUNGSANORDNUNG MIT NIEDEROHMIGEN KONTAKTEN UND HERSTELLUNGSVERFAHREN
(EN) INTEGRATED CIRCUIT ARRANGEMENT WITH LOW-RESISTANCE CONTACTS AND METHOD FOR PRODUCTION THEREOF
(FR) ENSEMBLE CIRCUIT INTEGRE A CONTACTS DE BASSE IMPEDANCE ET PROCEDE DE FABRICATION
Abrégé
(DE)
Auf einem Substrat wird im Kontaktbereich eine halbleitende Materiallage (84) und darauf eine metallische oder Metall enthaltende Schicht (102) aufgebracht, so dass in einem Übergangsbereich (210) Teile der halbleitenden Materiallage (84) von Teilen der Schicht (102) mehrfach durchdrungen werden. Durch diese Massnahme verringert sich der Kontaktwiderstand erheblich.
(EN)
A contact resistance may be significantly reduced, whereby a semi-conducting material layer (84) is deposited on a substrate in the contact region and a metallic or metal-comprising layer (102) is deposited thereon, such that in a transition region (210), parts of the semiconducting material layer (84) are multiply penetrated by parts of the layer (102).
(FR)
Selon la présente invention, une couche de matière semiconductrice (84) et une couche métallique ou contenant du métal (102) sont appliquées sur un substrat dans la zone de contact, de sorte que des parties de la couche de matière semiconductrice (84) sont plusieurs fois pénétrées par des parties de la couche métallique (102) dans une zone de transition (210). Ces mesures permettent de réduire considérablement la résistance de contact.
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