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1. WO2004102140 - CAPTEUR D'INFRAROUGE A UTILISATION DE SURFACE OPTIMISEE

Numéro de publication WO/2004/102140
Date de publication 25.11.2004
N° de la demande internationale PCT/DE2004/000970
Date du dépôt international 13.05.2004
CIB
G01J 5/10 2006.01
GPHYSIQUE
01MÉTROLOGIE; TESTS
JMESURE DE L'INTENSITÉ, DE LA VITESSE, DU SPECTRE, DE LA POLARISATION, DE LA PHASE OU DES CARACTÉRISTIQUES D'IMPULSIONS DE LUMIÈRE INFRAROUGE, VISIBLE OU ULTRAVIOLETTE; COLORIMÉTRIE; PYROMÉTRIE DES RADIATIONS
5Pyrométrie des radiations
10en utilisant des détecteurs électriques de radiations
CPC
G01J 5/10
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
H01L 2224/48472
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4847the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
48472the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
Déposants
  • HEIMANN SENSOR GMBH [DE]/[DE] (AllExceptUS)
  • SIMON, Marion [DE]/[DE] (UsOnly)
  • LENEKE, Wilhelm [DE]/[DE] (UsOnly)
  • SCHULZE, Mischa [DE]/[DE] (UsOnly)
  • STORCK, Karlheinz [DE]/[DE] (UsOnly)
  • SCHIEFERDECKER, Jörg [DE]/[DE] (UsOnly)
Inventeurs
  • SIMON, Marion
  • LENEKE, Wilhelm
  • SCHULZE, Mischa
  • STORCK, Karlheinz
  • SCHIEFERDECKER, Jörg
Mandataires
  • HUDLER, Frank
Données relatives à la priorité
103 21 639.113.05.2003DE
Langue de publication allemand (DE)
Langue de dépôt allemand (DE)
États désignés
Titre
(DE) INFRAROTSENSOR MIT OPTIMIERTER FLÄCHENNUTZUNG
(EN) INFRARED SENSOR WITH OPTIMISED SURFACE UTILISATION
(FR) CAPTEUR D'INFRAROUGE A UTILISATION DE SURFACE OPTIMISEE
Abrégé
(DE)
Die vorliegende Erfindung betrifft einen Strahlungssensor, z. B. für die berührungslose Tempera­turmessung oder die Infrarot-Spektroskopie, mit einem Detektorelement, wobei das Detektorele­ment ein Absorberelement (13, 14, 15, 16, 51, 52), das Strahlung absorbiert und sich dadurch er­wärmt, und einen Tragkörper (2) mit einer Tragkörperfläche zur Aufnahme des Absorberelements (13, 14, 15, 16, 51, 52) aufweist, wobei die Tragkörperfläche eine Ausnehmung aufweist und das Absorberelement (13, 14, 15, 16, 51, 52) derart auf der Tragkörperfläche und über der Ausnehmung angeordnet ist, daß zumindest ein Abschnitt des Absorberelements (13, 14, 15, 16, 51, 52) den Tragkörper (2) nicht berührt. Um einen Strahlungssensor der eingangs genannten Art zur Verfü­gung zu stellen, welcher auf möglichst kleiner Chipfläche ein verstärktes Signal erzeugt und der einen kleinen Meßfleck erlaubt und mit bekannten standardisierten Technologien hergestellt werden kann, wird erfindungsgemäß vorgeschlagen, daß die Ausnehmung eine Ausdehnung hat, die min­destens 45% der Tragkörperfläche entspricht.
(EN)
The invention relates to a radiation sensor, for example, for non-contact temperature measurement, or infra-red spectroscopy, with a detector element, comprising an absorber element (13, 14, 15, 16, 51, 52), which absorbs radiation and thus heats up and a support body (2) with a support body surface, for housing the absorber element (13, 14, 15, 16, 51, 52). The support body surface has a recess and the absorber element (13, 14, 15, 16, 51, 52) is arranged on the support body surface and over the recess such that at least a section of the absorber element (13, 14, 15, 16, 51, 52) is not in contact with the support body (2). According to the invention, a radiation sensor of the above type may be provided, which generates an amplified signal on the smallest possible chip surface, which permits a small measurement point and which may be produced by conventional standardised technology, whereby the recess has a size corresponding to at least 45 % of the support body surface.
(FR)
La présente invention concerne un capteur de rayonnement, p. ex. pour la mesure sans contact de température ou la spectroscopie infrarouge, lequel capteur comprend un élément détecteur pourvu d'un élément absorbeur (13, 14, 15, 16, 51, 52), absorbant le rayonnement de façon à chauffer, et d'un corps porteur (2) présentant une surface portante destinée à recevoir l'élément absorbeur (13, 14, 15, 16, 51, 52), ladite surface portante étant pourvue d'un évidement et ledit élément absorbeur (13, 14, 15, 16, 51, 52) étant placé sur la surface portante et au-dessus de l'évidement, de sorte qu'au moins une section de l'élément absorbeur (13, 14, 15, 16, 51, 52) n'est pas en contact avec le corps porteur (2). L'objectif de cette invention est de mettre à disposition un capteur de rayonnement du type susmentionné, lequel capteur produit un signal amplifié sur une surface de puce la plus petite possible, permet un petit spot de mesure et peut être fabriqué au moyen de technologies normalisées connues. A cet effet, l'évidement présente une expansion correspondant à au moins 45 % de la surface portante.
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