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1. WO2004101215 - MICRO-USINAGE LASER ET PROCEDES DE MICRO-USINAGE LASER

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

What is claimed is:

1. A method comprising
positioning a substrate (206) proximate a laser machine (302) configured to emit a laser beam (306), the substrate (206) having a thickness between a first surface (210) and a generally opposing second surface (212);
directing the laser beam (306) at the first surface (210) to form a feature (400) into the substrate (206) through the first surface (210);
flowing an assist gas (314) proximate a portion of the first surface (210) at which the laser beam (306) is directed; and,
increasing the flow rate of the assist gas (314) as the feature (400) is formed through an increasing percentage of the thickness of the substrate (206).

2. The method of claim 1, wherein the act of increasing the flow rate comprises increasing the flow rate from a first flow rate in a linear relationship to feature depth.

3. A method of processing a semiconductor substrate comprising:
removing substrate material (502) from a substrate (206) at a first depth relative to a first surface (210) of the substrate (206) while delivering an assist gas (314) at a first flow rate; and,
removing substrate material (502) at a second greater depth while delivering the assist gas (314) at a second higher flow rate.

4. The method of claim 3, wherein the act of removing substrate material (502) from a substrate (206) at a first depth and the act of removing substrate material (502) at a second depth both comprise removing substrate material (502) at substantially the same rate.

5. A method comprising:
first laser machining a feature (400) into a substrate (206) to a first feature depth at a first set of laser beam conditions and a first set of assist gas conditions; and,
after the first laser machining, second laser machining the feature (400) into the substrate (206) to a second feature depth at a second different set of laser beam conditions and a second different set of assist gas conditions.

6. The method of claim 5, wherein said act of second laser machining increases a power of the laser beam (306) and a flow rate of assist gas (314) relative to the first act of laser machining.

7. A method of laser micromachining a substrate (206) comprising:
first laser machining a feature (400) into a substrate (206) to a first feature depth while supplying assist gas (314) to the substrate (206) according to a first set of assist gas conditions; and,
after the first laser machining, second laser machining the feature (400) into the substrate (206) to a second feature depth while supplying assist gas (314) to the substrate (206) according to a second different set of assist gas conditions.

8. The method of claim 7, wherein the second act of laser machining comprises supplying assist gas (314) at a flow rate which is different from a flow rate at which assist gas (314) is supplied during the first act of laser machining.

9. A print cartridge (102) comprising:
a substrate (206) having a first surface (210) and a generally opposing second surface (212) defining a thickness therebetween, the substrate (206) having a fluid handling slot (204) extending between the first and second surfaces (210, 212), the slot (204) formed by removing substrate material (502) to a first depth with a laser beam (306) according to a first set of laser beam conditions and supplying assist gas (314) according to a first set of assist gas conditions and removing additional substrate material (502) to a second greater depth with a laser beam (306) according to a second different set of laser beam conditions and supplying assist gas (314) according to a second different set of assist gas conditions.

10. The print cartridge (102) of claim 9, wherein said fluid handling slot (204) is defined, at least in part, by a pair of essentially parallel sidewalls (404, 406).