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1. WO2004100324 - LASER RESISTANT AUX DOMMAGES INDUITS PAR LE RAYONNEMENT INFRAROUGE INTERNE

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

WHAT IS CLAIMED IS:

1. A diode pumped laser, comprising
a cavity defined by two or more reflecting surfaces; and
a gain medium disposed within the cavity,
wherein a peak intensity of internal infrared radiation within the gain medium is greater than about 0.01 Gwatts/cm2,
wherein the gain medium contains co-dopant ions that make the gain medium resistant to ionizing radiation,
whereby the gain medium is resistant to damage from the infrared radiation.

2. The laser of claim 1 wherein the concentration in the gain medium of the co-dopant ions is sufficient to reduce a rate of degradation of the gain medium from infrared radiation by a factor two or more compared to the same or a substantially similar gain medium without the co-dopant ions.

3. The laser of claim 1 wherein the gain medium is a solid-state material.

4. The laser of claim 1 wherein the gain medium is a fiber, whereby the laser is a fiber laser.

5. The laser of claim 1 wherein the solid-state material is a crystalline material.

6. The laser of claim 1 wherein the gain medium is a fluoride crystal or an oxide crystal.

7. The laser of claim 1 wherein the gain medium is a garnet.

8. The laser of claim 1 wherein the gain medium is selected from the group of yttrium aluminum garnet (YAG), gadolinium gallium garnet (GGG), gadolinium scandium gallium garnet (GSGG), and yttrium scandium gallium garnet (YSGG)

9. The laser of claim 1 , wherein the gain medium is YAG.

10. The laser of claim 1 wherein the gain medium is Tm:Ho:YAG, Yb:YAG, Nd:YAG or Er:YAG.

11. The laser of claim 1 wherein the gain medium is Nd: YV04 or Nd: YALO.

12. The laser of claim 1 wherein the gain medium is Nd:YAG.

13. The laser of claim 12 wherein the co-dopant ions are Cr3+ ions or Ce3+ ions.

14. The laser of claim 13 wherein the co-dopant ions are present in the gain medium at a doping level of between aboutθ.01% and about 5%.

15. The laser of claim 14 wherein the co-dopant ions are present in the gain medium at a doping level of between about 0.5% and about 1%.

16. The laser of claim 1 further comprising a Q-switch disposed within the cavity.

17. The laser of claim 16 wherein the laser is a low-noise Q-switched laser.

18. The laser of claim 16 wherein the laser is an actively Q-switched laser.

19. The laser of claim 1, further comprising means, disposed within the cavity, for
frequency conversion of stimulated radiation from the gain medium.

20. The laser of claim 19 wherein the means for frequency conversion generates higher harmonics of the stimulated radiation.

21. The laser of claim 1 wherein the laser is a frequency-tripled laser.

22. The laser of claim 1 wherein the laser is configured to have low noise.

23. The laser of claim 1 wherein the laser can operate at more than about 5 times a threshold pump intensity.

24. The laser of claim 1 wherein the peak intensity of internal infrared radiation within the gain medium is greater than about 0.1 Gwatts/cm2.

25. A method for making a laser gain medium resistant to damage induced by internal infrared radiation, the method comprising:
co-doping the gain medium with ions that make the gain medium resistant to ionizing radiation, wherein the ions are present in the gain medium in a level sufficient to make the gain medium resistant to long-term degradation due to internal infrared radiation greater than about 0.01 GWatts/cm2 in peak intensity.

26. The method of claim 25 wherein the concentration in the gain medium of the co- dopant ions is sufficient to reduce a rate of degradation of the gain medium from infrared radiation by a factor two or more compared to the same or a substantially similar gain medium without the co-dopant ions.

27. The method of claim 25 wherein the gain medium is a solid-state material.

28. The method of claim 25 wherein the gain medium is a fiber.

29. The method of claim 25 wherein the solid-state material is a crystalline material.

30. The method of claim 25 wherein the gain medium is a fluoride crystal or an oxide crystal.

31. The method of claim 25 wherein the gain medium is a garnet.

32. The method of claim 25 wherein the gain medium is selected from the group of yttrium aluminum garnet (YAG), gadolinium gallium garnet (GGG), gadolinium scandium gallium garnet (GSGG), and yttrium scandium gallium garnet (YSGG).

33. The method of claim 25, wherein the gain medium is YAG.

34. The method of claim 25 wherein the gain medium is Tm:Ho:YAG, Yb:YAG, Nd:YAG or Er:YAG.

35. The method of claim 25 wherein the gain medium is Nd:YV04 or Nd:YALO.

36. The method of claim 25 wherein the gain medium is Nd:YAG.

37. The method of claim 36 wherein the ions are Cr + ions or Ce + ions.

38. The method of claim 37 wherein the ions are present in the gain medium at a doping level of between aboutθ.01 % and about 5%.

39. The method of claim 38 The laser of claim 13 wherein the co-dopant ions are present in the gain medium at a doping level of between about 0.5% and about 1%.

40. The method of claim 25 wherein the peak intensity of internal infrared radiation within the gain medium is greater than about 0.01 GWatts/cm2

41. The use in a diode-pumped infrared laser of a gain medium co-doped with co-dopant ions that make the gain medium resistant to external ionizing radiation, wherein a peak intensity of internal infrared radiation is greater than about 0.01 GWatts/cm2 within the gain medium.

42. The use of claim 41 wherein the concentration in the gain medium of the co-dopant ions is sufficient to reduce a rate of degradation of the gain medium from infrared radiation by a factor two or more compared to the same or a substantially similar gain medium without the co-dopant ions.

43. The use of claim 41 wherein the gain medium is a solid-state material.

44. The use of claim 41 wherein the gain medium is a fiber, whereby the laser is a fiber laser.

45. The use of claim 41 wherein the solid-state material is a crystalline material.

46. The use of claim 41 wherein the gain medium is a fluoride crystal or an oxide crystal.

47. The use of claim 41 wherein the gain medium is a garnet.

48. The use of claim 41 wherein the gain medium is selected from the group of yttrium aluminum garnet (YAG), gadolinium gallium garnet (GGG), gadolinium scandium gallium garnet (GSGG), and yttrium scandium gallium garnet (YSGG).

49. The use of claim 41 , wherein the gain medium is YAG.

50. The use of claim 41 wherein the gain medium is Tm:Ho:YAG, Yb:YAG, Nd:YAG or EπYAG.

51. The use of claim 41 The laser of claim 1 wherein the gain medium is Nd:YV0 or
Nd:YALO.

52. The use of claim 41 wherein the gain medium is Nd:YAG.

53. The use of claim 41 wherein the co-dopant ions are Cr3+ ions or Ce3+ ions.

54. The use of claim 53 wherein the co-dopant ions are present in the gain medium at a doping level of between about 0.01% and about 5%.

55. The use of claim 54 wherein the co-dopant ions are present in the gain medium at a doping level of between about 0.5% and about 1%.

56. The use of claim 41 wherein the laser includes means for frequency conversion of stimulated radiation from the gain medium.

57. The use of claim 56 wherein the means for frequency conversion generates higher harmonics of the stimulated radiation from the gain medium.

58. The use of claim 57 wherein the laser is a frequency tripled laser.

59. The use of claim 41 wherein the laser is configured to have low noise.

60. The use of claim 41 wherein a peak intensity of internal infrared radiation is greater than about 0.1 GWatts/cm within the gain medium.

61. The use of claim 41 wherein the laser is Q-switched laser.

62. The use of claim 61 wherein the Q-switched laser is a low-noise Q-switched laser.

63. The use of claim 62 wherein the laser is an actively Q-switched laser.

64. The use of claim 41 wherein the laser can operate at more than about 5 times a threshold pump intensity.

65. A laser amplifier, comprising having a gain medium containing co-dopant ions that make the gain medium resistant to ionizing radiation, wherein a peak intensity of internal infrared radiation within the gain medium is greater than about 0.01 Gwatts/cm2.