Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

Aller à Demande

1. WO2004059739 - ARCHITECTURE DE MEMOIRE A CELLULES DE MEMOIRE GROUPEES EN SERIE

Numéro de publication WO/2004/059739
Date de publication 15.07.2004
N° de la demande internationale PCT/EP2003/014637
Date du dépôt international 19.12.2003
Demande présentée en vertu du Chapitre 2 30.07.2004
CIB
G11C 11/22 2006.01
GPHYSIQUE
11ENREGISTREMENT DE L'INFORMATION
CMÉMOIRES STATIQUES
11Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants
21utilisant des éléments électriques
22utilisant des éléments ferro-électriques
CPC
G11C 11/22
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
22using ferroelectric elements
H01L 27/10817
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10805with one-transistor one-capacitor memory cells
10808the storage electrode stacked over transistor
10817the storage electrode having multiple wings
H01L 27/10852
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
1085with at least one step of making the capacitor or connections thereto
10852the capacitor extending over the access transistor
H01L 27/11502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
H01L 27/11507
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
11507characterised by the memory core region
Déposants
  • INFINEON TECHNOLOGIES AG [DE]/[DE]
Inventeurs
  • HILLIGER, Andreas
  • BRUCHHAUS, Rainer
  • WOHLFAHRT, Joerg
Mandataires
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Données relatives à la priorité
10/248,23430.12.2002US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) MEMORY ARCHITECTURE WITH SERIES GROUPED MEMORY CELLS
(FR) ARCHITECTURE DE MEMOIRE A CELLULES DE MEMOIRE GROUPEES EN SERIE
Abrégé
(EN)
An IC with a memory array having a series architecture is disclosed. A memory cell of a series group comprises a transistor coupled to a capacitor in parallel. The capacitor includes first and second subcapacitors, one stacked one on top of the other. Providing a capacitor with two or more subcapacitors in a stack advantageously increases the capacitance of a capacitor without increasing surface area.
(FR)
L'invention concerne un microcircuit intégré comportant un ensemble mémoire présentant une architecture en série. Une cellule de mémoire d'un groupe en série comprend un transistor couplé à un condensateur en parallèle. Ledit condensateur comporte un premier et un second condensateur secondaire, l'un étant empilé au sommet de l'autre. Le fait de munir le condensateur de deux condensateurs secondaires ou davantage, de manière empilée, intensifie avantageusement la capacité d'un condensateur, sans en augmenter la surface active.
Également publié en tant que
Dernières données bibliographiques dont dispose le Bureau international