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1. WO2004006340 - STRUCTURES SEMI-CONDUCTRICES A GRILLE FLOTTANTE

Numéro de publication WO/2004/006340
Date de publication 15.01.2004
N° de la demande internationale PCT/US2003/021677
Date du dépôt international 09.07.2003
Demande présentée en vertu du Chapitre 2 09.02.2004
CIB
H01L 29/788 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
772Transistors à effet de champ
78l'effet de champ étant produit par une porte isolée
788à grille flottante
CPC
H01L 27/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 27/11521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
H01L 27/11558
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11558the control gate being a doped region, e.g. single-poly memory cells
H01L 29/66825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66825with a floating gate
H01L 29/7883
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
7883charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
H01L 29/7885
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
7884charging by hot carrier injection
7885Hot carrier injection from the channel
Déposants
  • IMPINJ,INC. [US]/[US]
Inventeurs
  • DIORIO, Christopher J.,
  • HUMES, Todd E.,
Mandataires
  • RITCHIE, David, B.
Données relatives à la priorité
10/192,77309.07.2002US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) FLOATING-GATE SEMICONDUCTOR STRUCTURES
(FR) STRUCTURES SEMI-CONDUCTRICES A GRILLE FLOTTANTE
Abrégé
(EN)
Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog memory, nonvolatile digital memory, or on-line learning in silicon. The memory is nonvolatile because the devices use electrically isolated floating gates to store electronic charge. The devices enable on-line learning because the electron injection and tunneling mechanisms that write the memory can occur during normal device operation. The memory updates and learning are bidirectional because the injection and tunneling mechanisms add and remove electrons from the floating gate, respectively. Because the memory updates depend on both the stored memory and the pFETs terminal voltages, and because they are bidirectional, the devices can implement on-line learning functions.
(FR)
L'invention concerne une injection d'électrons à chaud, entraînée par une ionisation par choc de trous, au niveau de la jonction canal à drain d'un MOSFET à p canaux, laquelle injection permet d'obtenir un nouveau mécanisme d'écriture d'une mémoire à grille flottante. Des structures variées de grille flottante <i>p</i>FET, font appel à une combinaison de ce mécanisme et d'une canalisation électronique pour mettre en oeuvre une mémoire analogique non volatile, une mémoire numérique non volatile, ou un apprentissage en ligne dans du silicium. La mémoire est non volatile parce que les dispositifs font appel à des grilles flottantes électriquement isolées pour stocker une charge électronique. Ces dispositifs permettent un apprentissage en ligne car les mécanismes d'injection et de canalisation électroniques écrivant la mémoire peuvent se produire lors du fonctionnement normal du dispositif. Les mises à jour et l'apprentissage de la mémoire sont bidirectionnels car les mécanismes d'injection et de canalisation permettent respectivement d'ajouter et de retirer des électrons de la grille flottante. Comme les mises à jour de mémoire dépendent à la fois de la mémoire stockée et des tensions terminales des <i>p</i>FET, et comme elles sont bidirectionnelles, les dispositifs peuvent mettre en oeuvre des fonctions d'apprentissage en ligne.
Dernières données bibliographiques dont dispose le Bureau international