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1. WO2003001579 - DISPOSITIF ET PROCEDE DE TRAITEMENT DE SUBSTRAT

Numéro de publication WO/2003/001579
Date de publication 03.01.2003
N° de la demande internationale PCT/JP2002/006297
Date du dépôt international 24.06.2002
CIB
H01L 21/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 21/768 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
70Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun, ou de parties constitutives spécifiques de ceux-ci; Fabrication de dispositifs à circuit intégré ou de parties constitutives spécifiques de ceux-ci
71Fabrication de parties spécifiques de dispositifs définis en H01L21/7089
768Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
CPC
H01L 21/67173
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67161characterized by the layout of the process chambers
67173in-line arrangement
H01L 21/67178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67161characterized by the layout of the process chambers
67178vertical arrangement
H01L 21/67184
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67184characterized by the presence of more than one transfer chamber
H01L 21/67213
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67207comprising a chamber adapted to a particular process
67213comprising at least one ion or electron beam chamber
H01L 21/76807
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76807for dual damascene structures
H01L 21/76825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76822Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
76825by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
Déposants
  • TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-chome Minato-ku, Tokyo 107-8481, JP (AllExceptUS)
  • ISHIDA, Hiroshi [JP/JP]; JP (UsOnly)
Inventeurs
  • ISHIDA, Hiroshi; JP
Mandataires
  • OMORI, Junichi; 4th Floor, Matrice Bldg. 2-13-7, Minamiaoyama Minato-ku, Tokyo 107-0062, JP
Données relatives à la priorité
2001-19197825.06.2001JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD
(FR) DISPOSITIF ET PROCEDE DE TRAITEMENT DE SUBSTRAT
Abrégé
(EN)
A structure, in which a second treating unit group that performs, under vacuum or pressure, e.g., an electron beam or ultraviolet ray irradiation, a CVD or a cleaning treatment is provided integrally with a first treating unit group that forms an interlayer insulation film under a normal pressure, can shorten a treating time especially in a damascene process to decrease foot print per treating power. A treating time thus shortened can prevent an insulating film from absorbing moisture in the air that causes deterioration in film quality, and contribute to forming a quality insulation film even if a porous film, for example, is used as an insulation film.
(FR)
L'invention concerne une structure dans laquelle un second groupe d'unités de traitement qui assure, sous vide ou sous pression, une irradiation aux rayons ultraviolets et par faisceau électronique, un procédé CVD ou un traitement de nettoyage, fait partie intégrante d'un premier groupe d'unités de traitement formant un film isolant intercouche sous pression normale. Ladite structure permet de réduire le temps de traitement, notamment dans un procédé de damasquinage, de sorte que l'encombrement par rapport à la puissance de traitement soit réduit. Un temps de traitement ainsi réduit, peut empêcher le film isolant d'absorber l'humidité de l'air induisant la détérioration de la qualité du film, et contribue à former un film isolant de qualité même si un film poreux, par exemple, est utilisé comme film isolant.
Également publié en tant que
RU2004104362
RU2004107499
Dernières données bibliographiques dont dispose le Bureau international