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1. WO2001006572 - DETECTEUR D'ONDE MILLIMETRIQUE ET D'INFRAROUGE LOINTAIN

Numéro de publication WO/2001/006572
Date de publication 25.01.2001
N° de la demande internationale PCT/JP2000/004540
Date du dépôt international 07.07.2000
CIB
G01J 5/10 2006.01
GPHYSIQUE
01MÉTROLOGIE; TESTS
JMESURE DE L'INTENSITÉ, DE LA VITESSE, DU SPECTRE, DE LA POLARISATION, DE LA PHASE OU DES CARACTÉRISTIQUES D'IMPULSIONS DE LUMIÈRE INFRAROUGE, VISIBLE OU ULTRAVIOLETTE; COLORIMÉTRIE; PYROMÉTRIE DES RADIATIONS
5Pyrométrie des radiations
10en utilisant des détecteurs électriques de radiations
G01J 5/20 2006.01
GPHYSIQUE
01MÉTROLOGIE; TESTS
JMESURE DE L'INTENSITÉ, DE LA VITESSE, DU SPECTRE, DE LA POLARISATION, DE LA PHASE OU DES CARACTÉRISTIQUES D'IMPULSIONS DE LUMIÈRE INFRAROUGE, VISIBLE OU ULTRAVIOLETTE; COLORIMÉTRIE; PYROMÉTRIE DES RADIATIONS
5Pyrométrie des radiations
10en utilisant des détecteurs électriques de radiations
20en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 31/02325
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
02325the optical elements not being integrated nor being directly associated with the device
H01L 31/03046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
03046including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
H01L 31/0352
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
H01Q 9/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
QANTENNAS, i.e. RADIO AERIALS
9Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
04Resonant antennas
16with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
28Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
Déposants
  • JAPAN SCIENCE AND TECHNOLOGY CORPORATION [JP]/[JP] (AllExceptUS)
  • KOMIYAMA, Susumu [JP]/[JP] (UsOnly)
  • OLEG, Astafiev [RU]/[JP] (UsOnly)
  • VLADMIR, Antonov [RU]/[JP] (UsOnly)
  • HIRAI, Hiroshi [JP]/[JP] (UsOnly)
  • KUTSUWA, Takeshi [JP]/[JP] (UsOnly)
Inventeurs
  • KOMIYAMA, Susumu
  • OLEG, Astafiev
  • VLADMIR, Antonov
  • HIRAI, Hiroshi
  • KUTSUWA, Takeshi
Mandataires
  • HIRAYAMA, Kazuyuki
Données relatives à la priorité
11/20226115.07.1999JP
11/22803711.08.1999JP
11/33419625.11.1999JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) MILLIMETER WAVE AND FAR-INFRARED DETECTOR
(FR) DETECTEUR D'ONDE MILLIMETRIQUE ET D'INFRAROUGE LOINTAIN
Abrégé
(EN)
The invention provides a millimeter wave and far-infrared detector of extreme sensitivity and shorter response time. The detector comprises an input (1) for introducing incident millimeter wave or far-infrared radiation (2) to a detector antenna; a semiconductor substrate (4) on which is formed a single-electron transistor (14) for controlling the current penetrating a semiconductor quantum dot (12); and bow tie antennas (6, 6a, 6b, 6c) for concentrating millimeter wave or far-infrared radiation (2) onto a semiconductor quantum dot that define a submicron space in the single-electron transistor (14). The quantum dot forming a two-dimensional electron system efficiently absorbs the concentrated radiation and maintains the resulting excitation state for more than 10 nanoseconds so that more than 1,000,000 electrons can be transported for a single photon absorbed.
(FR)
L'invention concerne un détecteur d'onde millimétrique et d'infrarouge lointain présentant une très grande sensibilité et un temps de réponse plus court. Le détecteur comporte une entrée (1) pour introduire l'onde millimétrique incidente ou le rayonnement (2) dans l'infrarouge lointain incident dans une antenne de détection ; un substrat (4) de semi-conducteur sur lequel est formé un transistor (14) à un seul électron réglant le courant pénétrant un point quantique (12) semi-conducteur ; et des antennes papillon (6, 6a, 6b, 6c) pour concentrer l'onde millimétrique ou le rayonnement (2) dans l'infrarouge lointain sur un point quantique semi-conducteur définissant un espace submicronique du transistor (14) à un seul électron. Le point quantique, formant un système d'électrons à deux dimensions, absorbe efficacement le rayonnement concentré et maintient l'état d'excitation résultant pendant plus de 10 nanosecondes, de façon à permettre le transport de plus de 1000000 d'électrons pour un seul photon absorbé.
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