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1. WO2000034549 - DEPOT CHIMIQUE EN PHASE VAPEUR A BASSE TEMPERATURE POUR LA PREPARATION DE FILMS FERROELECTRIQUES AVEC UTILISATION D'ALCOXYDES DE BISMUTH

Numéro de publication WO/2000/034549
Date de publication 15.06.2000
N° de la demande internationale PCT/US1999/028832
Date du dépôt international 06.12.1999
Demande présentée en vertu du Chapitre 2 07.07.2000
CIB
C23C 16/40 2006.01
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
CREVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES PAR DIFFUSION DANS LA SURFACE, PAR CONVERSION CHIMIQUE OU SUBSTITUTION; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL
16Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)
22caractérisé par le dépôt de matériaux inorganiques, autres que des matériaux métalliques
30Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
40Oxydes
CPC
C23C 16/40
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 16/409
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
409of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
C23C 16/4485
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4485by evaporation without using carrier gas in contact with the source material
C23C 16/56
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
56After-treatment
H01L 21/02197
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02197the material having a perovskite structure, e.g. BaTiO3
Déposants
  • INFINEON TECHNOLOGIES AG [DE]/[DE]
  • ADVANCED TECHNOLOGY MATERIALS, INC. [US]/[US]
Inventeurs
  • HINTERMAIER, Frank, S.
  • VAN BUSKIRK, Peter, C.
  • ROEDER, Jeffrey, F.
  • HENDRIX, Bryan, C.
  • BAUM, Thomas, H.
  • DESROCHERS, Debra, A.
Mandataires
  • WHITMAN, Robert, A.
  • VIGARS, Christopher, Ian
Données relatives à la priorité
09/208,54109.12.1998US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) CVD PROCESS USING BI ALCOXIDES
(FR) DEPOT CHIMIQUE EN PHASE VAPEUR A BASSE TEMPERATURE POUR LA PREPARATION DE FILMS FERROELECTRIQUES AVEC UTILISATION D'ALCOXYDES DE BISMUTH
Abrégé
(EN)
Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alcoxide group and is decomposed and deposited at a temperature lower than 450 °C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
(FR)
La présente invention concerne un procédé de dépôt chimique en phase vapeur servant à la formation d'un film d'oxyde de bismuth, d'oxyde de strontium et d'oxyde de tantale sur un substrat chauffé, et ce, par décomposition de précurseurs de ces oxydes à la surface du substrat. Le précurseur de l'oxyde de bismuth, qui est un complexe bismuthé incluant au moins un groupe alcoxyde, se décompose et se dépose à une température inférieure à 450°C. Le film d'oxydes de bismuth, de strontium et de tantale obtenu par ce procédé de dépôt chimique en phase vapeur est essentiellement non ferroélectrique, mais un traitement thermique ultérieur permet d'en faire un film ferroélectrique.
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