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1. WO1999000835 - PROCEDE ET APPAREIL D'ENCAPSULATION D'UNE PUCE A PROTUBERANCES MOULEE PAR INJECTION

Numéro de publication WO/1999/000835
Date de publication 07.01.1999
N° de la demande internationale PCT/GB1998/001730
Date du dépôt international 12.06.1998
Demande présentée en vertu du Chapitre 2 11.01.1999
CIB
H01L 21/56 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
50Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes H01L21/06-H01L21/326185
56Capsulations, p.ex. couches de capsulation, revêtements
CPC
B29C 45/34
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
45Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
17Component parts, details or accessories; Auxiliary operations
26Moulds
34having venting means
H01L 21/563
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
H01L 21/565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
565Moulds
H01L 2224/16145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16135the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
16145the bodies being stacked
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
Déposants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] ()
Inventeurs
  • FARQUHAR, Donald, Seton
  • PAPATHOMAS, Konstantinos
Mandataires
  • BOYCE, Conor
Données relatives à la priorité
08/884,22827.06.1997US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) METHOD AND APPARATUS FOR INJECTION MOLDED FLIP CHIP ENCAPSULATION
(FR) PROCEDE ET APPAREIL D'ENCAPSULATION D'UNE PUCE A PROTUBERANCES MOULEE PAR INJECTION
Abrégé
(EN)
The electrical interconnections between an integrated circuit chip assembly are encapsulated and reinforced with a high viscosity encapsulant material in a single step molding process wherein a mold is placed over an integrated circuit chip assembly and encapsulant material is dispensed through an opening in the mold and forced around and under the integrated circuit chip by external pressure encapsulating the integrated circuit chip assembly. An integrated circuit chip assembly having a reinforced electrical connection which is more resistant to weakening as a result is stress created by differences in coefficient of thermal expansion between the integrated circuit chip and the substrate to which the integrated circuit chip is attached is produced.
(FR)
Les interconnexions électriques d'un ensemble puce à circuits intégrés sont encapsulées et renforcées à l'aide d'un matériau d'encapsulation de grande viscosité. L'ensemble puce à circuits intégrés est encapsulé par pression externe exercée pendant un processus continu de moulage au cours duquel un moule est placé au-dessus de l'ensemble puce, et le matériau d'encapsulation injecté autour et au-dessous de la puce à travers une ouverture du moule. On décrit en outre un ensemble puce à circuits intégrés qui comprend une connexion électrique renforcée, plus résistante à l'affaiblissement dû à la contrainte induite par les écarts de coefficient de dilatation thermique entre la puce à circuits intégrés et le substrat sur lequel cette dernière est soudée.
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