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1. (WO1993018545) PROCEDE D'ATTAQUE DE DIOXYDE DE SILICIUM AU LASER
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique
We Claim:
1. A method of laser etching an oxide or nitride coated substrate comprising the steps of:
(a) depositing an amorphous silicon layer on the
substrate;
(b) forming a pattern in the amorphous silicon
layer by exposing selected regions of the
amorphous silicon layer to laser light in the
presence of reactive ions; and
(c) etching the substrate in a plasma environment
or reactive ion environment using the
amorphous silicon as a mask over the oxide or
nitride.
2. A method of laser etching a silicon dioxide layer on an integrated circuit device comprising the steps of:
(a) depositing an amorphous silicon layer over the
silicon dioxide layer on the integrated
circuit device;
(b) forming a pattern in the amorphous silicon
layer by exposing selected regions of the
amorphous silicon layer to laser light in the
presence of reactive ions; and
(c) etching the silicon dioxide layer on the
integrated circuit device in a plasma
environment or reactive ion environment using
the amorphous silicon as a mask over the
silicon dioxide.
3. The method of claim 2 wherein the amorphous silicon layer is less than about 2,000 A in thickness.
4. The method of claim 2 wherein the laser used to expose selective regions of the amorphous silicon has a wavelength of 5,145 A.
5. The method of claim 2 wherein the reactive ions are halogen ions.
6. The method of claim 5 wherein the reactive ions are chlorine ions.
7. The method of claim 2 wherein the silicon dioxide is etched in a plasma etchant containing CHF 3.

8. A method of laser etching a metallic layer region in an integrated circuit device comprising the steps of:
(a) depositing an amorphous silicon layer over the
metallic layer region on the integrated
circuit device;
(b) forming a pattern in the amorphous silicon
layer by exposing selected regions of the
amorphous silicon layer to laser light in the
presence of reactive ions, and
(c) etching the metallic layer region on the
integrated circuit device in a plasma
environment or a reactive ion environment
using the amorphous silicon as a mask over the
metallic layer.
9. A method of laser etching a silicon dioxide layer over a metallic layer region in an integrated circuit device comprising the steps of:
(a) depositing a layer of silicon dioxide over the
metallic layer region on the integrated
circuit device;
(b) depositing a layer of amorphous silicon over
the layer of silicon dioxide that was
deposited over the metallic layer region.
(c) forming a pattern in the amorphous silicon
layer by exposing selected regions of the
amorphous silicon layer to laser light in the
presence of reactive ions, and
(d) etching the layer of silicon dioxide that was
deposited over the metallic layer region, in
a plasma environment or a reactive ion
environment using the amorphous silicon as a
mask to the layer of silicon dioxide.
10. The method in claim 9, further comprising the step of:
(a) etching the metallic layer region on the
integrated circuit device in a plasma
environment or a reactive ion environment using the etched layer of silicon dioxide as a hard mask over the metallic layer region.

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