Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

Goto Application

1. WO1981001345 - MOYEN DE PROTECTION D'UN CIRCUIT INTEGRE CONTRE LES RADIATIONS ALPHA

Numéro de publication WO/1981/001345
Date de publication 14.05.1981
N° de la demande internationale PCT/GB1980/000180
Date du dépôt international 27.10.1980
CIB
H01L 21/26 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
26Bombardement par des radiations ondulatoires ou corpusculaires
H01L 23/556 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
552Protection contre les radiations, p.ex. la lumière
556contre les rayons alpha
CPC
H01L 21/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48245the item being metallic
48247connecting the wire to a bond pad of the item
H01L 23/556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
552Protection against radiation, e.g. light ; or electromagnetic waves
556against alpha rays
H01L 24/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
H01L 2924/00014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
00014the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Déposants
Inventeurs
Données relatives à la priorité
793811902.11.1979GB
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) INTEGRATED CIRCUIT ALPHA RADIATION SHIELDING MEANS
(FR) MOYEN DE PROTECTION D'UN CIRCUIT INTEGRE CONTRE LES RADIATIONS ALPHA
Abrégé
(EN)
An integrated circuit (16) is provided with shielding means (14) (20) to protect it from bombardment by alpha particles and other ionising radiation, so as to avoid errors in the functioning of the integrated circuit by the sudden introduction of electrical charge attendant upon the incidence of such radiation. The shielding means is in the form of a semiconducting layer, of the type of material which itself might be used for the fabrication of an integrated circuit, said layer being located in a close, overlapping manner relative to the fabricated area of the semiconducting lamina on which the integrated circuit, to be protected, is situated, so sandwiching the integrated circuit between two layers of material which are thick enough to prevent the through-passage of high energy alpha particles, and which, by their purity, are substantially free from any radioactive inclusions.
(FR)
Circuit integre (16) avec des moyens de protection (14, 20) contre le bombardement de particules alpha et d'autres radiations ionisantes, de facon a eviter des erreurs dans le fonctionnement du circuit integre causees par l'introduction soudaine d'une charge electrique qui accompagne l'incidence d'une telle radiation. Le moyen de protection a la forme d'une couche semi-conductrice, du type de materiau qui pourrait etre utilise pour la fabrication d'un circuit integre, ladite couche etant placee dans une relation de proximite et de recouvrement par rapport a la surface de la feuille semi-conductrice sur laquelle est situe le circuit integre a proteger, enfermant ainsi le circuit a integrer entre deux couches de materiau qui sont suffisamment epaisses pour empecher le passage de particules alpha a energie elevee, et qui, a cause de leur purete, sont sensiblement exemptes de toute inclusion radioactive.
Dernières données bibliographiques dont dispose le Bureau international