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Machine translation
1. (WO1979000645) VARIABLE-SPOT SCANNING IN AN ELECTRON BEAM EXPOSURE SYSTEM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1979/000645    International Application No.:    PCT/US1979/000086
Publication Date: 06.09.1979 International Filing Date: 14.02.1979
IPC:
H01J 37/30 (2006.01), H01J 37/302 (2006.01)
Applicants:
Inventors:
Priority Data:
879097 21.02.1978 US
Title (EN) VARIABLE-SPOT SCANNING IN AN ELECTRON BEAM EXPOSURE SYSTEM
(FR) POINT D"EXPLORATION VARIABLE DANS UN SYSTEME D"EXPOSITION A FAISCEAU ELECTRONIQUE
Abstract: front page image
(EN)An attractive high speed technique for writing microcircuit patterns with a scanning electron spot of variable size is described in the prior art. In such an electron beam exposure system, two spaced-apart apertured mask plates (26, 40) with a deflector (48) there between are included in the electron column of the system. As described herein, a third apertured mask plate (56) and an associated deflector (54) are serially added to the components in the column. In this way, the speed and other performance characteristics of such a system are significantly enhanced.
(FR)Une technique avantageuse rapide d"ecriture de mires de microcircuits avec un point d"exploration electronique de dimensions variables est decrite dans l"art anterieur. Dans un tel systeme d"exposition a faisceau deux masques a ouvertures espaces l"un de l"autre (26, 40) avec un deflecteur (48) entre les deux sont inclus dans la colonne electronique du systeme. Un troisieme masque a ouvertures (56) et un deflecteur associe (54) sont ajoutes en serie aux composants de la colonne. Ainsi, la vitesse et d"autres caracteristiques de performance d"un tel systeme se trouvent nettement ameliorees.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)