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1. US20060214184 - Process for forming a planar diode using one mask

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

Claims

1. A method of forming a planar diode comprising:
providing a substrate of a first conductivity type;
depositing a layer of oxide over the substrate;
using a mask to expose the central portion of the oxide layer for etching;
removing the central portion of the oxide via etching;
diffusing dopants into the substrate via window diffusion to form a single region having a uniform second conductivity type;
plating a metal onto the window and on the opposite side of the substrate, wherein the oxide acts as a mask for the plating of the metal, and the metal is plated only onto the window and is not plated onto the oxide; and
coating the remaining oxide and a portion of the plating on a side of the substrate with a passivating agent,
wherein the planar diode is formed using only one mask.
2. The method of claim 1, wherein the passivating agent is polyimide.
3. The method of claim 1, wherein said first conductivity type has N-type conductivity and said second conductivity type has P-type conductivity
4. The method of claim 1, wherein the metal comprises nickel.