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1. KR1020130009774 - 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물

Office
République de Corée
Numéro de la demande 1020127023883
Date de la demande 22.02.2011
Numéro de publication 1020130009774
Date de publication 23.01.2013
Numéro de délivrance 1018473820000
Date de délivrance 10.04.2018
Type de publication B1
CIB
C08G 77/26
CCHIMIE; MÉTALLURGIE
08COMPOSÉS MACROMOLÉCULAIRES ORGANIQUES; LEUR PRÉPARATION OU LEUR MISE EN UVRE CHIMIQUE; COMPOSITIONS À BASE DE COMPOSÉS MACROMOLÉCULAIRES
GCOMPOSÉS MACROMOLÉCULAIRES OBTENUS PAR DES RÉACTIONS AUTRES QUE CELLES FAISANT INTERVENIR UNIQUEMENT DES LIAISONS NON SATURÉES CARBONE-CARBONE
77Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
04Polysiloxanes
22contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène
26groupes contenant de l'azote
G03F 7/11
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
004Matériaux photosensibles
09caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
11avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
H01L 21/027
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
027Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe H01L21/18 ou H01L21/34187
CPC
C08G 77/26
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
22containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
26nitrogen-containing groups
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/0752
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
0752in non photosensitive layers or as additives, e.g. for dry lithography
G03F 7/091
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
091characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
G03F 7/094
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
094Multilayer resist systems, e.g. planarising layers
H01L 21/0274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
0271comprising organic layers
0273characterised by the treatment of photoresist layers
0274Photolithographic processes
Déposants 닛산 가가쿠 고교 가부시키 가이샤
닛산 가가쿠 고교 가부시키 가이샤
Inventeurs 칸노, 유타
나카지마, 마코토
칸노, 유타
시바야마, 와타루
나카지마, 마코토
타케다, 사토시
시바야마, 와타루
타케다, 사토시
Mandataires 특허법인씨엔에스
특허법인씨엔에스
Données relatives à la priorité JP-P-2010-039787 25.02.2010 JP
Titre
(KO) 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물
Abrégé
(KO) [과제] 하드 마스크로서 사용할 수 있는 레지스트 하층막을 형성하기 위한 리소그래피용 레지스트 하층막 형성 조성물을 제공한다. [해결수단] 실란 화합물로서 가수분해성 오가노실란, 그 가수분해물, 또는 그 가수분해 축합물을 포함하는 조성물에 있어서, 상기 실란 화합물은 그 분자 중에 아미드 결합과, 카르본산 부분 혹은 카르본산에스테르 부분 또는 이들 두 부분을 포함하는 유기기를 포함하는 실란 화합물을 포함하는 리소그래피용 레지스트 하층막 형성 조성물. 상기 실란 화합물 전체 중에, 아미드 결합과, 카르본산 부분 혹은 카르본산에스테르 부분 또는 이들 두 부분을 포함하는 유기기를 포함하는 실란 화합물의 비율이 5몰% 미만의 비율로 존재하는 리소그래피용 레지스트 하층막 형성 조성물. 상기 실란 화합물 전체 중에, 아미드 결합과, 카르본산 부분 혹은 카르본산에스테르 부분 또는 이들 두 부분을 포함하는 유기기를 포함하는 실란 화합물의 비율이 0.5 내지 4.9몰%의 비율로 존재하는 리소그래피용 레지스트 하층막 형성 조성물.
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