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1. JP2011176058 - SOLAR CELL

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Office
Japon
Numéro de la demande 2010037971
Date de la demande 23.02.2010
Numéro de publication 2011176058
Date de publication 08.09.2011
Numéro de délivrance 5484950
Date de délivrance 28.02.2014
Type de publication B2
CIB
H01L 31/06
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
06caractérisés par au moins une barrière de potentiel ou une barrière de surface
CPC
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
H01L 31/0376
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0376including amorphous semiconductors
Déposants SANYO ELECTRIC CO LTD
三洋電機株式会社
Inventeurs BABA TOSHIAKI
馬場　俊明
Mandataires 寺山　啓進
伊藤　市太郎
三好　広之
Titre
(EN) SOLAR CELL
(JA) 太陽電池
Abrégé
(EN)

PROBLEM TO BE SOLVED: To provide a solar cell that can increase a nopen-circuit voltage without depending on the reduction of recombination in crystal silicon.

SOLUTION: The solar cell 10 includes a crystal Si layer 50 having p-n junction, and a semiconductor layer 60 formed on a first principal plane 50as of the crystal Si layer 50. The semiconductor layer 60 has the same conductivity type as the conductivity type of a portion in contact with the semiconductor layer 60 of the crystal Si layer 50. The open-circuit voltage in light irradiation to the solar cell 10 differs from a level difference between the quasi Fermi level of electrons and the quasi Fermi level of holes in the crystal Si layer 50.

COPYRIGHT: (C)2011,JPO&INPIT


(JA)

【課題】結晶シリコンにおける再結合の低減に依存せずに開放電圧を増大し得る太陽電池を提供する。
【解決手段】、太陽電池１０は、ｐｎ接合を有する結晶Ｓｉ層５０と、結晶Ｓｉ層５０の第１主面５０ａｓ上に形成された半導体層６０とを備える。半導体層６０は、結晶Ｓｉ層５０の半導体層６０と接触している部分の導電型と同じ導電型を有する。太陽電池１０への光照射時の開放電圧は、結晶Ｓｉ層５０内における電子の擬フェルミ準位とホールの擬フェルミ準位との準位差と異なる。
【選択図】図１
Documents de brevet associés
EP2541615
WO/2011/105417
US20130220417
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