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1. JP2005536035 - フォトダイオード

Office
Japon
Numéro de la demande 2004508419
Date de la demande 22.05.2003
Numéro de publication 2005536035
Date de publication 24.11.2005
Numéro de délivrance 4384030
Date de délivrance 02.10.2009
Type de publication B2
CIB
H01L 31/10
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
08dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
10caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
CPC
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
H01L 31/035281
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
035281Shape of the body
H01L 31/103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
Y10S 257/927
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
257Active solid-state devices, e.g. transistors, solid-state diodes
927Different doping levels in different parts of PN junction to produce shaped depletion layer
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Déposants トムソン ライセンシング エスエーエス
Inventeurs ヘーエマン インゴ
ケムナ アルミン
Mandataires 筒井 秀隆
Données relatives à la priorité 10223202 24.05.2002 DE
Titre
(JA) フォトダイオード
Abrégé
(JA)

フォトダイオードは、半導体基板(12)と、この半導体基板内の光検出領域であってドリフト電流成分を生成するための空間電荷ゾーン領域(18)と拡散電流成分を生成するための拡散領域(24)とを備える光検出領域とに加え、半導体基板の中において拡散領域を半導体基板内の隣接する周辺領域に対して少なくとも部分的に隔離するための分離手段(20)を含む。半導体基板内に分離手段を設けることで、フォトダイオード応答性が鈍くなることに起因するフォトダイオードの帯域幅の減少が抑制できる。半導体基板内の分離手段は、拡散領域を半導体基板の隣接する周辺領域に対して区分することで、一方では拡散電流キャリアが生成される拡散領域を縮小させて拡散電流成分となる電荷キャリアの数を減少させる役割を果たし、他方ではその縮小した拡散領域内で生成された拡散電荷キャリアを分離手段によって「吸い取る」ことで光電流を構成できなくする。