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1. CN102597881 - Exposure apparatus and photomask used therein

Office
Chine
Numéro de la demande 200980162367.0
Date de la demande 12.11.2009
Numéro de publication 102597881
Date de publication 18.07.2012
Numéro de délivrance 102597881
Date de délivrance 08.07.2015
Type de publication B
CIB
G03F 7/20
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
G03F 1/38
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
1Originaux pour la production par voie photomécanique de surfaces texturées, p.ex. masques, photomasques ou réticules; Masques vierges ou pellicules à cet effet; Réceptacles spécialement adaptés à ces originaux; Leur préparation
38Masques à caractéristiques supplémentaires, p.ex. marquages pour l'alignement ou les tests, ou couches particulières; Leur préparation
CPC
G03F 1/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
G03F 1/50
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
G03F 7/70283
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70283Masks or their effects on the imaging process, e.g. Fourier masks, greyscale masks, holographic masks, phase shift masks, phasemasks, lenticular masks, multiple masks, tilted masks, tandem masks
G03F 7/7035
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
7035Proximity or contact printer
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Déposants V Technology Co., Ltd.
Inventeurs Mizumura Michinobu
Mandataires liu wenhai
Titre
(EN) Exposure apparatus and photomask used therein
(ZH) 曝光装置及其使用的光掩模
Abrégé
(EN)
Disclosed is a photomask (3) which is provided with: a plurality of mask pattern rows (15) which are formed by arranging a plurality of mask patterns (13) at a predetermined pitch in the direction substantially orthogonally intersecting the transfer direction (A) of a subject to be exposed; and a plurality of microlenses (14), which are formed on the side of the subject to be exposed by respectively corresponding to the mask patterns (13) of the mask pattern rows (15), and reduce the mask patterns (13) and project the mask patterns on the subject to be exposed. Subsequent mask pattern rows (15b-15d) and the microlenses (14) corresponding to the subsequent mask pattern rows are formed by being shifted by a predetermined amount in the direction wherein the mask patterns (13) are arranged, such that exposure can be performed by supplementing portions between a plurality of exposure patterns formed by means of a mask pattern row (15a) positioned on the head side of the body to be exposed, said head side being in the transfer direction (A), with a plurality of exposure patterns formed by means of the subsequent mask pattern rows (15b-15d). Thus, fine exposure patterns are formed with high resolution and high density over the entire surface of the subject to be exposed.

(ZH)

本发明中,光掩模(3)具备:沿着与被曝光体的搬运方向(A)大致正交的方向以规定间距排列形成多个掩模图案(13)的多个掩模图案列(15);与多个掩模图案列(15)的各掩模图案(13)分别对应而形成在被曝光体侧,并将各掩模图案(13)缩小投影到被曝光体上的多个微型透镜(14),其中,以在位于被曝光体的搬运方向(A)的排头侧的掩模图案列(15a)所形成的多个曝光图案之间通过后续的掩模图案列(15b~15d)所形成的多个曝光图案能够进行插补并曝光的方式,将上述后续的掩模图案列(15b~15d)及与之对应的各微型透镜(14)沿着多个掩模图案(13)的上述排列方向分别错开规定尺寸。由此,在被曝光体的整面上高分辨率且高密度地形成微细的曝光图案。

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