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Paramétrages

1. CN1902712 - Flash storage system with write/erase abort detection mechanism

Office Chine
Numéro de la demande 200480039311.3
Date de la demande 16.12.2004
Numéro de publication 1902712
Date de publication 24.01.2007
Numéro de délivrance 1902712
Date de délivrance 28.03.2012
Type de publication B
CIB
G PHYSIQUE
11
ENREGISTREMENT DE L'INFORMATION
C
MÉMOIRES STATIQUES
16
Mémoires mortes programmables effaçables
02
programmables électriquement
06
Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
10
Circuits de programmation ou d'entrée de données
G11C 16/10
CPC
G11C 16/0416
G11C 16/10
G11C 16/105
G11C 2216/16
Déposants Sandisk Corp.
桑迪士克股份有限公司
Inventeurs Lin Jason
杰森·林
Conley Kevin M.
凯文·M·康利
Chang Robert C.
罗伯特·C·张
Mandataires liu guowei
北京律盟知识产权代理有限责任公司 11287
Données relatives à la priorité 10751096 31.12.2003 US
Titre
(EN) Flash storage system with write/erase abort detection mechanism
(ZH) 具有写入/擦除中止检测机制的快闪存储系统
Abrégé
(EN)
The present invention presents a non-volatile memory and method for its operation that ensures reliable mechanism for write and erase abort detection in the event of lost of power during non-volatile memory programming and erasing with minimized system performance penalty. During a multi-sector write process, an indication of a successful write in one sector is written into the overhead of the following sector at the same time as the following sector's data content is written. The last sector written will additionally have an indication of its own successful write written into its overhead. For erase, an erase abort flag in the first sector of the block can be marked after a successful erase operation.

(ZH)

本发明揭示一种非易失性存储器及其操作方法,其以最小的系统性能损失在非易失性存储器编程及擦除过程中掉电情况下确保具有用于写入及擦除中止检测的可靠机制。在一多扇区写入过程期间,在写入后一扇区的数据内容的同时,将一在一个扇区内成功进行写入的指示写入所述后一扇区的开销中。最末写入的扇区将另外将一其自身成功写入的指示写入至其开销内。对于擦除而言,可在一成功擦除操作后,在所述区块的第一扇区内标记一擦除中止旗标。