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1. CN1262016 - Cross connection element and data transmission network

Office Chine
Numéro de la demande 98806658.0
Date de la demande 25.06.1998
Numéro de publication 1262016
Date de publication 02.08.2000
Numéro de délivrance 1185880
Date de délivrance 19.01.2005
Type de publication C
CIB
H04Q 11/04
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
QSÉLECTION
11Dispositifs de sélection pour systèmes multiplex
04pour multiplex à division de temps
H04Q 7/20
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
QSÉLECTION
7Dispositifs de sélection auxquels les abonnés sont reliés par des liaisons radio-électriques ou des liaisons inductives
20dans lesquels les liaisons radio-électriques ou inductives sont bidirectionnelles, p.ex. systèmes radio-mobiles
CPC
H01L 27/0623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0617comprising components of the field-effect type
0623in combination with bipolar transistors
H01L 27/1203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1203the substrate comprising an insulating body on a semiconductor body, e.g. SOI
H01L 29/0834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
083Anode or cathode regions of thyristors or gated bipolar-mode devices
0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
H01L 29/0847
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
0843Source or drain regions of field-effect devices
0847of field-effect transistors with insulated gate
H01L 29/1095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1095Body region, i.e. base region, of DMOS transistors or IGBTs
H01L 29/42368
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42364characterised by the insulating layer, e.g. thickness or uniformity
42368the thickness being non-uniform
Déposants Nokia Network Co., Ltd.
诺基亚网络有限公司
Inventeurs Esa Toma
艾萨·托马
Mandataires zhang wei
中国国际贸易促进委员会专利商标事务所
Données relatives à la priorité 972788 27.06.1997 FI
Titre
(EN) Cross connection element and data transmission network
(ZH) 交叉连接单元和数据传输网
Abrégé
(EN)
This invention relates to a cross connection element (20) which comprises at least one input (31), outputs (32, 33, 37) and branching means (38 to 40) for forwarding through predetermined outputs (32, 33, 37) at least some signal components of a first serial data signal (S1) received through the input. To provide such a cross connection element that considerably facilitates the management of the data transmission network, the branching means comprise means (38, 39) for transparently forwarding single signal components of a serial data signal (S1) received through said input (31), as serial data signals (S2, S3) through the output (32, 33) indicated by the routing data stored in the memory means (40) of the cross connection element (20). In addition, the cross connection element (1) comprises at least one output (37) for transparently forwarding a single signal component of a first serial data signal (S1) indicated by the routing data stored in the memory means (40).

(ZH)

本发明涉及一种交叉连接单元,至少包括:一个输入端,多个输出端,分支装置,用于通过预定输出端转发通过输入端接收到的第一串行数据信号的至少一些信号分量,去复用装置,用于将通过输入端接收到的串行数据信号的多个信号分量彼此区分开,复用装置,用于生成信号分量的串行数据信号;分支装置包括交换装置,用于将从去复用装置的输出端接收到的串行数据信号的单个信号分量转发到复用装置,并且基于存储在交叉连接单元的存储器装置中的路由寻址数据,经过由控制单元所指示的输出端以串行数据信号形式透明地转发单个信号分量;交叉连接单元还包括至少一个这样的输出端,即输出端用于透明地转发由存储在存储器装置中的路由数据所指示的第一串行数据信号的单个信号分量。

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