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1. CN112382319 - Self-reference storage structure and storage and calculation integrated circuit

Office
Chine
Numéro de la demande 202011077197.0
Date de la demande 10.10.2020
Numéro de publication 112382319
Date de publication 19.02.2021
Type de publication A
CIB
G11C 11/16
GPHYSIQUE
11ENREGISTREMENT DE L'INFORMATION
CMÉMOIRES STATIQUES
11Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants
02utilisant des éléments magnétiques
16utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
Déposants INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
Inventeurs XING GUOZHONG
邢国忠
LIN HUAI
林淮
LIU YU
刘宇
ZHANG KAIPING
张凯平
ZHANG KANGWEI
张康玮
LYU HANGBING
吕杭炳
XIE CHANGQING
谢常青
LIU QI
刘琦
LI LING
李泠
LIU MING
刘明
Mandataires 北京华沛德权律师事务所 11302
Titre
(EN) Self-reference storage structure and storage and calculation integrated circuit
(ZH) 一种自参考存储结构和存算一体电路
Abrégé
(EN) The invention relates to the technical field of memories, in particular to a self-reference storage structure and a storage and calculation integrated circuit, and the self-reference storage structurecomprises: three transistors including a first transistor, a second transistor and a third transistor; and two magnetic tunnel junctions that comprise a first magnetic tunnel junction and a second magnetic tunnel junction; the first magnetic tunnel junction is connected in series between the first transistor and the second transistor; the second magnetic tunnel junction is connected in series between the second transistor and the third transistor; when the first transistor, the second transistor and the third transistor are started, write-in of one-bit binary information is realized; when data storage is realized, one-bit binary writing can be realized only by applying one-way current, and the device is low in time delay, low in power consumption and high in data reading margin in the writing process.
(ZH) 本发明涉及存储器技术领域,尤其涉及一种自参考存储结构及存算一体电路,该自参考存储结构,包括:三个晶体管,包括:第一晶体管、第二晶体管、第三晶体管;两个磁隧道结,包括:第一磁隧道结、第二磁隧道结;所述第一磁隧道结串联于所述第一晶体管与所述第二晶体管之间;所述第二磁隧道结串联于所述第二晶体管与所述第三晶体管之间;在开启第一晶体管、第二晶体管、第三晶体管时,实现一位二进制信息的写入;在实现数据存储时,只需要施加单向电流即可实现一位二进制的写入,且器件在写入过程中延时低、功耗小,数据读取裕度高。
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