(EN) The invention relates to a monocrystalline germanium slice which contains silicon with the atomic concentration ranging from 3x1014 atoms/cc to 10x1018 atoms/cc, boron with the atomic concentration ranging from 1x1016 atoms/cc to 10x1018 atoms/cc, and gallium with the atomic concentration ranging from 1x1016 atoms/cc to 10x1019 atoms/cc. The invention further relates to a preparation method of themonocrystalline germanium slice, a preparation method of a crystal bar, and application of the single crystal wafer in increasing the open-circuit voltage of a solar cell. The monocrystalline germanium slice obtained through the invention has an improved electricity property, and especially has small differential resistivity and poor carrier concentration.
(ZH) 本发明涉及锗单晶片,其包含原子浓度为3×1014atoms/cc至10×1018atoms/cc的硅、原子浓度为1×1016atoms/cc至10×1018atoms/cc的硼以及原子浓度为1×1016atoms/cc至10×1019atoms/cc的镓。本发明还涉及该锗单晶片的制法、锗单晶棒的制法,以及涉及锗单晶片用于增加太阳能电池开路电压的用途。本发明的获得的锗单晶片具有改进的电学性能,特别是具有更小的电阻率差和载流子浓度差。