(EN) The present invention provides a large-size photo mask which exposes a large-size region and has a structure suitable for forming fine patterns, and a producing method of the large-size photo mask. The large-size photo mask which is easily produced and is capable of transferring fine patterns is obtained by a structure, wherein a primary component of a light shielding film is chromium or a chromium compound, a primary component of a phase shift film is chromic oxide or chromic nitric oxide, and the phase shift film is laminated on the light shielding film in a light shielding region. Further,the large-size photo mask further comprises an antireflection film made of a chromium compound between the light shielding film and the phase shift film, and therefore the reflection rate of the lightshielding region is restrained.
(ZH) 本发明提供一种作为曝光大尺寸区域的大型光掩模且适合形成微细图案的构成的相移掩模及其制造方法。藉由构成为遮光膜以铬或铬化合物为主成分，相移膜以氧化铬乃至氮氧化铬为主成分，且在上述遮光区域中在遮光膜上层叠有相移膜，而获得容易制造且可转印微细图案的大型相移掩模。另外，在遮光膜与相移膜之间，构成为还具有包含铬化合物的抗反射膜，抑制遮光区域的反射率。
