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1. CN107207945 - Polishing composition

Office
Chine
Numéro de la demande 201680006419.5
Date de la demande 19.01.2016
Numéro de publication 107207945
Date de publication 26.09.2017
Type de publication A
CIB
C09K 3/14
CCHIMIE; MÉTALLURGIE
09COLORANTS; PEINTURES; PRODUITS À POLIR; RÉSINES NATURELLES; ADHÉSIFS; COMPOSITIONS NON PRÉVUES AILLEURS; UTILISATIONS DE SUBSTANCES, NON PRÉVUES AILLEURS
KSUBSTANCES POUR DES APPLICATIONS NON PRÉVUES AILLEURS; APPLICATIONS DE SUBSTANCES NON PRÉVUES AILLEURS
3Substances non couvertes ailleurs
14Substances antidérapantes; Abrasifs
B24B 37/00
BTECHNIQUES INDUSTRIELLES; TRANSPORTS
24MEULAGE; POLISSAGE
BMACHINES, DISPOSITIFS OU PROCÉDÉS POUR MEULER OU POUR POLIR; DRESSAGE OU REMISE EN ÉTAT DES SURFACES ABRASIVES; ALIMENTATION DES MACHINES EN MATÉRIAUX DE MEULAGE, DE POLISSAGE OU DE RODAGE
37Machines ou dispositifs de rodage; Accessoires
H01L 21/304
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
30Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes H01L21/20-H01L21/26162
302pour changer leurs caractéristiques physiques de surface ou leur forme, p.ex. gravure, polissage, découpage
304Traitement mécanique, p.ex. meulage, polissage, coupe
CPC
B24B 37/044
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
042operating processes therefor
044characterised by the composition of the lapping agent
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/1436
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1436Composite particles, e.g. coated particles
H01L 21/31053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
C09K 3/1409
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1409Abrasive particles per se
C09K 3/1463
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1454Abrasive powders, suspensions and pastes for polishing
1463Aqueous liquid suspensions
Déposants FUJIMI INC.
Inventeurs ASHITAKA KEIJI
TSUBOTA SHOGO
Données relatives à la priorité 2015-008052 19.01.2015 JP
Titre
(EN) Polishing composition
(ZH) 研磨用组合物
Abrégé
(EN)
The invention provides a polishing composition derived from a sulfonic acid-modified aqueous anionic sol produced by a production method including: a first reaction step in which water and sulfonic acid-modified colloidal silica obtained by immobilizing sulfonic acid on the surfaces of silica particles are included in a polishing composition having a pH level of 6 or lower, the sulfonic acid-modified colloidal silica being the reaction product obtained by heating, in the presence of a silane coupling agent having a functional group that can be chemically converted into a sulfonic acid group, a starting material colloidal silica in which the number distribution ratio of microparticles having a particle size of 40% or less relative to the volume-average particle diameter based on the Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope is 10% or less; and a second reaction step in which the functional group is converted to a sulfonic acid group by treating the reaction product. When the product is used as abrasive particles in a sulfonic acid-modified aqueous anionic sol to form a polishing composition for polishing a substance to be polished that includes SiN, it is possible to improve the stability of the SiN polishing rate over time and reduce the hydrogen peroxide content.

(ZH)
本发明使用一种研磨用组合物,其在pH6以下的研磨用组合物中含有使磺酸固定于二氧化硅颗粒的表面而成的磺酸修饰胶体二氧化硅和水,此时,作为前述磺酸修饰胶体二氧化硅,使用源自通过包含如下工序的制造方法制造的磺酸修饰水性阴离子二氧化硅溶胶:第1反应工序,在具有能够化学转化成磺酸基的官能团的硅烷偶联剂的存在下,将微小颗粒的个数分布比率为10%以下的原料胶体二氧化硅进行加热而得到反应物,该微小颗粒具有基于由使用扫描型电子显微镜的图像解析得到的Heywood径(圆当量直径)的体积平均粒径的40%以下的粒径;第2反应工序,通过处理前述反应物而将前述官能团转化成磺酸基。在用于研磨包含SiN的研磨对象物的研磨用组合物中,用作磨粒时,可以提高SiN研磨速率的经时稳定性,且也可以降低过氧化氢的含量。