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1. US20150032398 - Combined x-ray and optical metrology

Office États-Unis d'Amérique
Numéro de la demande 14074689
Date de la demande 07.11.2013
Numéro de publication 20150032398
Date de publication 29.01.2015
Numéro de délivrance 09535018
Date de délivrance 03.01.2017
Type de publication B2
CIB
G01N 23/203
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
20en utilisant la diffraction de la radiation par les matériaux, p.ex. pour rechercher la structure cristalline; en utilisant la diffusion de la radiation par les matériaux, p.ex. pour rechercher les matériaux non cristallins; en utilisant la réflexion de la radiation par les matériaux
203en mesurant la rétrodiffusion
G01B 15/00
GPHYSIQUE
01MÉTROLOGIE; TESTS
BMESURE DE LA LONGUEUR, DE L'ÉPAISSEUR OU DE DIMENSIONS LINÉAIRES ANALOGUES; MESURE DES ANGLES; MESURE DES SUPERFICIES; MESURE DES IRRÉGULARITÉS DES SURFACES OU CONTOURS
15Dispositions pour la mesure caractérisées par l'utilisation de radiations d'ondes ou de particules
G01N 23/22
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
22en mesurant l'émission secondaire de matériaux
H01L 21/66
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
66Test ou mesure durant la fabrication ou le traitement
CPC
G01N 23/203
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
20by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
203Measuring back scattering
G01B 15/00
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
15Measuring arrangements characterised by the use of wave or particle radiation
G01B 2210/56
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
2210Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
G01N 23/2206
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
22by measuring secondary emission from the material
2206Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Déposants KLA-Tencor Corporation
Inventeurs Kevin A. Peterlinz
Andrei V. Shchegrov
Michael S. Bakeman
Thaddeus Gerard Dziura
Mandataires Spano Law Group
Joseph S. Spano
Titre
(EN) Combined x-ray and optical metrology
Abrégé
(EN)

Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. X-ray measurement data of a specimen is analyzed to determine at least one specimen parameter value that is treated as a constant in a combined analysis of both optical measurements and x-ray measurements of the specimen. For example, a particular structural property or a particular material property, such as an elemental composition of the specimen, is determined based on x-ray measurement data. The parameter(s) determined from the x-ray measurement data are treated as constants in a subsequent, combined analysis of both optical measurements and x-ray measurements of the specimen. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data.