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1. WO2020165607 - PHOTODÉTECTEURS

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

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CLAIMS

1. A photodetector comprising:

a semiconductor substrate having an input surface for receiving illumination;

control electrodes for control of photogenerated charge within the substrate; and

a filter on the radiation input surface of the substrate, the filter comprising a dielectric-metal band pass filter having a metal layer and one or more dielectric layers with one dielectric layer between the substrate surface and the metal layer; and

a connector for applying a bias voltage to the metal layer with respect to the substrate.

2. The photodetector according to claim 1 , wherein the band pass filter comprises a metal layer between two dielectric layers.

3. The photodetector according to claim 1 or 2 wherein the band pass filter is an induced transmission filter.

4. The photodetector according to any preceding claim, wherein the input surface of the substrate is the back surface and the control electrodes are on the front surface such that the photodetector is a back illuminated device.

5. The photodetector according to any of claims 1 to 3, wherein the input surface and control electrodes are on the same side of the substrate such that the photodetector is a front illuminated device.

6. The photodetector according to any preceding claim, wherein the one or more dielectric layers have non-uniform thickness across the face of the detector thereby providing a band pass filter at different wavelengths.

7. The photodetector according to claim 6, wherein the metal layer comprises multiple sections separated by electrically non-conductive material and each section arranged to be independently biased .

8. The photodetector according to any preceding claim wherein the metal layer is one of: aluminium, an aluminium alloy or silver.

9. The photodetector according to any preceding claim, wherein at least one of the dielectric layers comprises silicon dioxide.

10. The photodetector according to any preceding claim, wherein the polarity of the biasing voltage is such that the carrier charge is biased away from the input surface and towards a charge collection arrangement.

1 1. The photodetector according to claim 10, wherein the photodetector is an n channel back illuminated device and the bias is a negative bias of the metal layer with respect to the substrate.

12. The photodetector according to claim 10, wherein the photodetector is a p channel back illuminated device and the bias is a positive bias of the metal layer with respect to the substrate.

13. The photodetector according to any preceding claim, wherein the connection comprises one or more top contacts for connecting the metal layer to a voltage supply.

14. The photodetector according to any preceding claim, wherein the connection comprises one or more bond pads for connecting the metal layer to a voltage supply.

15. The photodetector according to any preceding claim comprising a CCD sensor.

16. The photodetector according to any of claims 1 to 15 comprising a CMOS sensor.

17. The photodetector according to any preceding claim, wherein the photodetector is a CCD image sensor.

18. The photodetector according to any preceding claim wherein the filter has a plurality of band pass ranges.

19. The photodetector as claimed in any preceding claim wherein the filter is a broad band pass filter.

20. The photodetector as claimed in any preceding claim wherein the band pass filter allows transmission of radiation in at least part of the wavelength range from 110nm to 400nm.

21. The photodetector as claimed in any preceding claim wherein the substrate includes a highly doped region under the filter.

22. The photodetector as claimed in any of claims 1 to 20 wherein the substrate under the filter has only the original doping density of the substrate and no additional doping.

23. An apparatus comprising the photodetector according to any preceding claim.

24. The apparatus according to claim 23, being spectroscopy apparatus.

25. A camera comprising the apparatus according to claim 23.

24. A method of operating a semiconductor photodetector comprising:

providing a substrate having an input surface for receiving illumination; providing multiple electrodes for control of photogenerated charge within the substrate;

providing a filter on the input surface of the substrate, wherein the filter comprises a dielectric-metal band pass filter having a metal layer and one or more dielectric layers; and

applying a bias voltage to the metal layer with respect to the substrate.