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1. WO2020160671 - SYSTÈMES ET PROCÉDÉS DE RÉALISATION DE NANOCRISTALLOGRAPHIE PAR DIFFRACTION D'ÉLECTRONS EN SÉRIE

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

THEREFORE WHAT IS CLAIMED IS:

1. A method of performing serial electron crystallography, comprising:

scanning an electron nanobeam among a plurality of scan locations within a sample region, the sample region comprising a plurality of crystals, and employing a detector to detect, at each scan location, a signal associated with scattered electrons, thereby collecting an image dataset mapping the sample region;

processing the image dataset to identify crystals therein;

determining a set of scanning parameters suitable for scanning the electron nanobeam among a respective set of crystal locations corresponding to at least a subset of the crystals identified in the image dataset;

employing the set of scanning parameters to serially scan a collimated electron nanobeam among the respective set of crystal locations and employing a camera to collect at least one diffraction pattern at each of the crystal locations; and processing electron diffraction patterns obtained from at least a subset of the crystal locations to calculate a crystal structure of the crystals.

2. The method according to claim 1 wherein, while positioning the collimated electron nanobeam at a given crystal location, a set of electron diffraction patterns is sequentially collected, such that a net radiation dose delivered at the given crystal location is fractionated among the set of electron diffraction patterns.

3. The method according to claim 2 wherein the set of electron diffraction patterns are collected in the absence of a time delay between successive camera exposures.

4. The method according to claim 2 wherein a subset of electron diffraction patterns obtained at the given crystal location is selected for use when calculating the crystal structure.

5. The method according to claim 4 wherein selection of the subset of electron diffraction patterns is made after serial scanning of the electron nanobeam among the set of crystal locations.

6. The method according to claim 4 or 5 wherein the net dose delivered at the given crystal location is sufficient to cause radiation damage.

7. The method according to claim 4 or 5 wherein the subset of electron diffraction patterns consists of each diffraction pattern for which a corresponding radiation dose delivered to the given crystal location is less than a radiation dose threshold.

8. The method according to any one of claims 4 to 6 wherein the subset of electron diffraction patterns consists of those diffraction patterns that satisfy quality criteria, such that diffraction patterns compromised by radiation damage are rejected.

9. The method according to claim 2 wherein, when calculating the crystal structure, a first subset of electron diffraction patterns is employed when performing indexing and a second subset of electron diffraction patterns is employed when performing integration, wherein a radiation dose corresponding to the first subset of electron diffraction patterns is greater than a radiation dose corresponding to the set of electron diffraction patterns.

10. The method according to any one of claims 1 to 9 wherein the set of crystal locations correspond to crystals satisfying size criteria.

1 1. The method according to claim 10 wherein the size criteria is based on one or more of crystal morphology and transmitted electron intensity.

12. The method according to any one of claims 1 to 1 1 wherein the electron nanobeam is focused when collecting the image dataset mapping the sample region.

13. The method according to claim 12 further comprising, prior to performing serial scanning of the electron nanobeam among the set of crystal locations:

obtaining an additional image dataset mapping the sample region, wherein the additional image dataset is collected with the electron nanobeam in a collimated configuration;

processing the image dataset and the additional image dataset to determine positional corrections for correcting a positional offset between focused and collimated beam configurations; and

applying the positional corrections when scanning the electron nanobeam.

14. The method according to any one of claims 1 to 1 1 wherein the electron nanobeam is collimated when collecting the image dataset mapping the sample region.

15. The method according to any one of claims 1 to 14 wherein the electron nanobeam is scanned relative to the sample region using scanning coils.

16. The method according to claim 15 wherein the electron nanobeam is serially scanned among the crystal locations along a plurality of scan lines, and wherein the scanning parameters are configured such that the electron nanobeam is scanned to one or more auxiliary locations to avoid hysteresis effects associated with the scanning coils.

17. The method according to any one of claims 1 to 14 wherein the electron nanobeam is scanned relative to the sample region by controlling translation of a sample stage relative to the electron nanobeam.

18. The method according to any one of claims 1 to 14 wherein the image dataset is a first image dataset, the set of crystal locations are a first set of crystal locations, and the set of scanning parameters are a first set of scanning parameters, the method further comprising, prior to processing the electron diffraction patterns to calculate the crystal structure:

tilting a sample stage supporting the crystals from a first angle to a second angle;

scanning the electron nanobeam to collect a second image dataset mapping the sample region at the second angle;

processing the first image dataset and the second image dataset to determine a coordinate transformation relating the first set of crystal locations to a second set of crystal locations associated with the second angle;

determining a second set of scanning parameters suitable for scanning the electron nanobeam among the second set of crystal locations at the second angle; and

employing the second set of scanning parameters to serially scan the collimated electron nanobeam among the second set of crystal locations and employing the camera to collect at least one diffraction pattern at each crystal location of the second set of crystal locations.

19. The method according to claim 18 wherein the coordinate transformation is determined by performing image registration between the first image dataset and the second image dataset.

20. The method according to any one of claims 1 to 19 wherein the electron nanobeam is scanned using a scanning transmission electron microscope adapted to serially scan the electron nanobeam according to a custom scanning pattern determined based on the crystals identified in the image dataset.

21. The method according to any one of claims 1 to 20 wherein a timing of the collection of the diffraction patterns is synchronized with the serial scanning of the electron nanobeam.

22. The method according to any one of claims 1 to 20 wherein a dwell time of the electron nanobeam at each crystal location is determined based on a frame rate of the camera.

23. The method according to any one of claims 1 to 22 wherein the detector is a high-angle annular dark field detector.

24. The method according to any one of claims 1 to 23 wherein at least a portion of the processing of the electron diffraction patterns for the calculation of the crystal structure is performed while serially scanning the collimated electron nanobeam among the respective set of crystal locations.

25. The method according to any one of claims 1 to 24 further comprising:

processing the image dataset to determine a measure of crystal morphology for at least one crystal; and

employing the measure of crystal morphology to restrict a search space of crystal orientations when performing indexing.

26. The method according to any one of claims 1 to 24 further comprising:

processing the image dataset to determine a thickness measure for at least one crystal; and

employing the thickness measure to account for multiple electron scattering when performing crystal structure determination.

27. A system for performing serial electron crystallography, comprising:

an electron beam instrument capable of scanning an electron nanobeam relative to a sample region, the electron beam instrument comprising a detector and a camera; and

control and processing circuitry operatively coupled to the electron beam instrument, the control and processing circuitry comprising at least one processor and associated memory, the memory storing instructions executable by the at least one processor for performing operations comprising:

controlling the electron beam instrument to scan the electron nanobeam among a plurality of scan locations within the sample region and employing a detector to detect, at each scan location, a signal associated with scattered electrons, thereby collecting an image dataset mapping the sample region;

processing the image dataset to identify crystals therein; determining a set of scanning parameters suitable for scanning the electron nanobeam among a respective set of crystal locations corresponding to at least a subset of the crystals identified in the image dataset;

employing the set of scanning parameters to serially scan a collimated electron nanobeam among the respective set of crystal locations and employing a camera to collect at least one diffraction pattern at each of the crystal locations; and processing electron diffraction patterns obtained from at least a subset of the crystal locations to calculate a crystal structure of the crystals.