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1. (WO2011148279) FILTRE POUR DISPOSITIF ÉLECTROLUMINESCENT
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

What is being claimed is:

1. A structure comprising:

a semiconductor light emitting device capable of emitting first light having a first peak wavelength;

a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength; and

a filter comprising a metal nanoparticle array, the metal nanoparticle array comprising an array of areas of a first material separated by a second material, wherein the first material and the second material have different indices of refraction and one of the first material and the second material is metal; wherein

the metal nanoparticle array is configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range.

2. The structure of claim 1 wherein the metal nanoparticle array is disposed between the semiconductor light emitting device and the wavelength converting element.

3. The structure of claim 2 wherein the first wavelength range includes the first light and the second wavelength range includes the second light.

4. The structure of claim 1 wherein the wavelength converting element is disposed between the semiconductor light emitting device and the metal nanoparticle array.

5. The structure of claim 4 wherein the first wavelength range includes the second light and the second wavelength range includes the first light.

6. The structure of claim 1 wherein the first material is metal and the second material is air.

7. The structure of claim 1 wherein the first material is air and the second material is metal.

8. The structure of claim 1 wherein metal comprises at least one of silver and gold.

9. The structure of claim 1 wherein the metal nanoparticle array is configured to pass at least 70% of the light in the first wavelength range regardless of angle of incidence on the metal nanoparticle array.

10. The structure of claim 1 wherein the filter is configured such that a wavelength at which a minimum amount of light is passed by the filter shifts no more than 30 nm for light incident on the filter at angles between 0° and 60° relative to a normal to a major surface of the filter.

11. The structure of claim 1 wherein the areas of first material are metal elements, wherein each metal element has a width between 5 and 500 nm and a height between 5 and 500 nm, and wherein nearest neighbor metal elements are spaced between 10 and 1000 nm apart.

12. A structure comprising:

a semiconductor light emitting device capable of emitting first light having a first peak wavelength;

a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength; and

a filter configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range, wherein the filter is configured such that a wavelength at which a minimum amount of light is passed by the filter shifts no more than 30 nm for light incident on the filter at angles between 0° and 60° relative to a normal to a major surface of the filter.

13. The structure of claim 12 wherein the filter comprises a multilayer stack of materials with different indices of refraction.

14. The structure of claim 13 wherein the multilayer stack comprises titania and a material having an index of refraction of at least 1.4 and no more than 2.

15. The structure of claim 12 wherein the filter is disposed between the semiconductor light emitting device and the wavelength converting element.

16. The structure of claim 15 wherein the first wavelength range includes the first light and the second wavelength range includes the second light.

17. The structure of claim 12 wherein the wavelength converting element is disposed between the semiconductor light emitting device and the filter.

18. The structure of claim 17 wherein the first wavelength range includes the second light and the second wavelength range includes the first light.

19. The structure of claim 12 wherein:

the filter is a metal nanoparticle array;

the wavelength converting element is a ceramic phosphor; and

the filter is disposed between the semiconductor light emitting device and the phosphor. 20. The structure of claim 19 wherein:

the metal nanoparticle array comprises an array of metal elements;

each metal element has a width between 5 and 500 nm and a height between 5 and 500 nm; and

nearest neighbor metal elements are spaced between 10 and 1000 nm apart.