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1. WO2020160851 - DISPOSITIF DE FORMATION DE MOTIFS ET SON PROCÉDÉ D'UTILISATION

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

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CLAIMS

1. An attenuated phase shift patterning device comprising:

a first component for reflecting radiation, and

a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern comprising at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use,

wherein the second component comprises a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

2. The attenuated phase shift patterning device of claim 1, wherein the second component comprises at least one of Ru, Rh, Tc and Re.

3. The attenuated phase shift patterning device of claim 2, wherein the second component comprises an alloy comprising at least one of Ru, Rh, Tc and Re.

4. The attenuated phase shift patterning device of any preceding claim, wherein the second component has a thickness in the range 30 to 45nm.

5. The attenuated phase shift patterning device of claim 4, wherein the second component has a thickness of 35 or 41nm.

6. The attenuated phase shift patterning device of any preceding claim, wherein the second component covers the portion of the first component which extends a distance of at least lOnm from the at least one uncovered portion of the first component.

7. The attenuated phase shift patterning device of any preceding claim, further comprising a third component for absorbing radiation, the third component comprising a material having a refractive index with a larger imaginary part (k) than the material of the second component, the third component covering at least a portion of the first component or the second component.

8. The attenuated phase shift patterning device of claim 7, wherein the material of the third component has a refractive index with an imaginary part (k) in the range 0.031 to 0.08.

9. The attenuated phase shift patterning device of either of claims 7 or 8, wherein the third component covers the portion of the first component which is greater than or equal to a distance in the range 20 to 240nm from the at least one uncovered portion of the first component.

10. The attenuated phase shift patterning device of any of claims 7-9, wherein the third component does not cover the second component.

11. The attenuated phase shift patterning device of any of claims 7-9, wherein the third component covers at least a portion of the second component.

12. The attenuated phase shift patterning device of any of claims 7-11, wherein the third component comprises at least one of Ta, Ag, Pt, Pd, Au, Ir, Os, Re, In, Co, Cd, Pb, Fe, Hg, TI, Cu, Zn, I, Te, Ga, Cr, W, Hf, TaBN, or an alloy comprising one or more of Ta, Ag, Pt, Pd, Au, Ir, Os, Re, In, Co, Cd, Pb, Fe, Hg, TI, Cu, Zn, I, Te, Ga, Cr, W, and Hf.

13. The attenuated phase shift patterning device of any of claims 1-5, wherein the second component has an arrangement configured to reduce the radiation diffracted into the zeroth diffraction order and wherein the arrangement has a sub-resolution pitch.

14. The attenuated phase shift patterning device of claim 13, wherein the radiation diffracted into the zeroth diffraction order is less than the radiation diffracted into higher diffraction orders.

15. The attenuated phase shift patterning device of either of claims 13 or 14, wherein the arrangement has a repeating pattern of sections of the second component across the attenuated phase shift patterning device, the sections of the second component being separated by spaces such that there are further uncovered portions of the first component.

16. The attenuated phase shift patterning device of claim 15, wherein the sections of the second component extend perpendicularly to the direction of the repeating pattern across the attenuated phase shift patterning device, the sections of the second component being separated by channels.

17. The attenuated phase shift patterning device of claim 1, wherein the second component comprises a material having a refractive index with a real part (n) of less than 0.91 and an imaginary part (k) greater than 0.03.

18. The attenuated phase shift patterning device of claim 17, wherein the second component comprises at least one of Ru, Pt, Ta or Co.

19. The attenuated phase shift patterning device of claim 18, wherein the second component comprises an alloy of Ru and Co.

20. The attenuated phase shift patterning device of claim 19, wherein the second component comprises an alloy of 2/3 Ru and 1/3 Co.

21. The attenuated phase shift patterning device of any of claims 17-20, wherein the second component has a thickness in the range 34-55nm.

22. The attenuated phase shift patterning device of any of claim 21, wherein the second component has a thickness of 41nm.

23. The attenuated phase shift patterning device of any preceding claim, wherein the first component is a multilayer.

24. A method of using an attenuated phase shift patterning device, comprising:

reflecting radiation from a first component of the attenuated phase shift patterning device, and

reflecting radiation from a second component of the attenuated phase shift patterning device such that the radiation reflected from the second component has a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern comprising at least one uncovered portion of the first component is formed for generating a patterned radiation beam, wherein the second component comprises a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

25. The method of claim 24, further comprising absorbing radiation using a third component having a refractive index with a larger imaginary part (k) than the second component, the third component covering at least a portion of the first component.