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1. WO2021011629 - VARACTOR AYANT UNE RÉGION DE JONCTION HYPER-ABRUPTE COMPRENANT UN SUPER-RÉSEAU ET PROCÉDÉS ASSOCIÉS

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

THAT WHICH IS CLAIMED IS:

1. A semiconductor device comprising:

a substrate;

a hyper-abrupt junction region carried by the substrate and comprising a first semiconductor layer having a first conductivity type, a superlattice layer on the first semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and

a second semiconductor layer on the superlattice layer and having a second conductivity type different than the first conductivity type; and

a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor.

2. The semiconductor device of Claim 1 wherein the hyper-abrupt junction region further comprises an intrinsic semiconductor layer above the superlattice layer.

3. The semiconductor device of Claim 1 wherein the hyper-abrupt junction region further comprises an intrinsic semiconductor layer below the superlattice layer.

4. The semiconductor device of Claim 1 wherein the first, second, and the superlattice layers are parallel to underlying portions of the substrate.

5. The semiconductor device of Claim 1 further comprising an intermediate semiconductor layer between the substrate and the hyper-abrupt junction region; and wherein the second contact comprises an implant laterally spaced apart from the hyper-abrupt junction region and extending from a surface of the intermediate semiconductor layer to the substrate.

6. The semiconductor device of Claim 5 further comprising a collector implant in the intermediate semiconductor layer below the hyper-abrupt junction region.

7. The semiconductor device of Claim 1 wherein the first and

second semiconductor layers each has a thickness in a range of 50nm to 300nm.

8. The semiconductor device of Claim 1 wherein the base semiconductor monolayers comprise silicon monolayers.

9. The semiconductor device of Claim 1 wherein the at least one non-semiconductor monolayer comprises oxygen.

10. The semiconductor device of Claim 1 wherein the base semiconductor monolayers comprise germanium.

11. The semiconductor device of Claim 1 wherein the at least one non-semiconductor monolayer comprises at least one of oxygen, nitrogen, fluorine, carbon and carbon-oxygen.

12. A method for making a semiconductor device comprising:

forming a hyper-abrupt junction region on a substrate and comprising a first semiconductor layer having a first conductivity type, a superlattice layer on the first semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and

a second semiconductor layer on the superlattice layer and having a second conductivity type different than the first conductivity type; and

forming a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor.

13. The method of Claim 12 wherein the hyper-abrupt junction region further comprises an intrinsic semiconductor layer above the superlattice layer.

14. The method of Claim 12 wherein the hyper-abrupt junction region further comprises an intrinsic semiconductor layer below the superlattice layer.

15. The method of Claim 12 wherein the first, second, and superlattice layers are parallel to underlying portions of the substrate.

16. The method of Claim 12 further comprising forming an intermediate semiconductor layer between the substrate and the hyper-abrupt junction region; and wherein forming the second contact comprises implanting a dopant laterally spaced apart from the hyper-abrupt junction region and extending from a surface of the intermediate semiconductor layer to the substrate.

17. The method of Claim 16 further comprising forming a collector implant in the intermediate semiconductor layer below the hyper-abrupt junction region.

18. The method of Claim 12 wherein the first and second semiconductor layers each has a thickness in a range of 50nm to 300nm.

19. The method of Claim 12 wherein the base semiconductor monolayers comprise silicon monolayers.

20. The method of Claim 12 wherein the at least one non semiconductor monolayer comprises oxygen.

21. The method of Claim 12 wherein the base semiconductor monolayers comprise germanium.

22. The method of Claim 12 wherein the at least one non semiconductor monolayer comprises at least one of oxygen, nitrogen, fluorine, carbon and carbon-oxygen.