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1. WO2016100393 - SOURCE DE LUMIÈRE À BASE DE PLASMA

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

What is claimed is:

1. A device comprising:

a system generating plasma from a target material at a plasma site in a chamber, the plasma producing radiation traveling along an optical pathway toward an intermediate location, and producing target material gas and ions exiting the plasma;

a component distanced from the plasma site by a closest distance, d; a flowing gas disposed between the plasma and the component, the gas establishing an average gas pressure, P, over the distance, d, sufficient to reduce ion energy below 100eV before the ions reach the component;

at least one outlet configured to receive buffer gas flowing from a fluidically coupled gas source; and

at least one pump removing gas from the chamber, the pump and outlet cooperating to reduce target material gas concentration along the optical pathway from the plasma to the intermediate location.

2. A device as recited in claim 1 wherein the component is a near normal incidence mirror reflecting EUV radiation from the plasma site to the intermediate location.

3. A device as recited in claim 1 wherein the device further comprises a flow directing structure to direct flow from the at least one outlet.

4. A device as recited in claim 3 wherein the component is a near normal incidence mirror and the flow directing structure comprises at least one vane positioned between the near normal incidence mirror and the plasma site to direct flow from the at least one outlet.

5. A device as recited in claim 3 wherein the flow directing structure comprises a tubular flow guide.

6. A device as recited in claim 1 wherein the radiation includes EUV radiation and the buffer gas has a higher EUV transmission than the target material gas.

7. A device as recited in claim 1 wherein the buffer gas is selected from the group of buffer gases consisting of Hydrogen, Helium, Argon, Nitrogen and combinations thereof.

8. A device as recited in claim 1 wherein the system is a laser produced plasma system having a drive laser irradiating target material formed into discrete targets selected from the group of discrete targets consisting of discrete target material droplets and discrete target material pellets.

9. A device as recited in claim 1 wherein the system is a laser produced plasma system having a drive laser irradiating target material coated on a surface of a rotatable, cylindrically-symmetric element.

10. A device as recited in claim 1 wherein at least one outlet cooperates with at least one pump to produce a transversely directed flow between the component and the plasma site to push target material gas out of the optical pathway.

11. A device as recited in claim 1 wherein the device further comprises a flow guide at the intermediate location and wherein at least one outlet directs buffer gas into the flow guide to reduce the concentration of target material gas along the optical pathway.

12. A device as recited in claim 1 wherein the radiation includes EUV radiation having a wavelength of 13.5nm.

13. A device as recited in claim 1 further comprising a partition in the chamber to establish a preselected gas flow pattern in the chamber.

14. A device comprising:

a system generating plasma from a target material at a plasma site in a chamber, the plasma producing radiation and ions exiting the plasma;

a component distanced from the plasma site by a closest distance, d; at least one outlet configured to introduce a buffer gas into the chamber; and

at least one pump assembly removing gas from the chamber, the pump assembly having a pump, a conductance control plate positioned upstream of the pump, the pump assembly cooperating with the at least one outlet to establish a flowing gas between the plasma and the component having an average gas pressure, P, over the distance, d, sufficient to reduce ion energy below 100eV before the ions reach the component.

15. A device as recited in claim 14 wherein the at least one pump assembly cooperates with the outlet to establish a flowing gas between the plasma and the component having an average gas pressure, P, over the distance, d, sufficient to reduce ion energy below 30eV before the ions reach the component.

16. A device as recited in claim 14 wherein the system produces radiation traveling along an optical pathway toward an intermediate location, and produces target material gas and ions exiting the plasma and wherein the at least one outlet is configured to receive buffer gas flowing from a fluidically coupled gas source and cooperate with the at least one pump removing gas from the chamber to reduce target material gas concentration along the pathway from the plasma to the intermediate location.

17. A device as recited in claim 14 wherein the pump has a pump inlet and the conductance control plate operates to establish a pressure, p, at the pump inlet, with p < P.

18. A device as recited in claim 14 further comprising a baffle positioned between the conductance control plate and the pump to reduce gas jet formation by the conductance control plate.

19. A device as recited in claim 14 further comprising a pump inlet extension positioned between the conductance control plate and the pump to prevent a gas jet formed by the conductance control plate from disrupting the pump.

20. A device as recited in claim 14 wherein the conductance control plate is formed with an aperture.

21. A device as recited in claim 20 further comprising a mechanism for adjusting the size of the aperture.

22. A device as recited in claim 14 wherein the conductance control plate is spaced from a line inlet to establish a gap therebetween.

23. A device as recited in claim 22 further comprising a mechanism for moving the conductance control plate relative to the line inlet to adjust the size of the gap.

24. A device as recited in claim 14 wherein the radiation includes EUV radiation having a wavelength of 13.5nm.

25. A device comprising:

a cylindrically-symmetric element rotatable about an axis and having a surface coated with a band of plasma-forming target material, the band extending from a first edge to a second edge and establishing an operational region of plasma-forming target material;

a housing overlying the surface and formed with an opening to expose plasma-forming target material for irradiation by a drive laser to produce plasma, the opening extending beyond at least one of the first and second edges of the band to distance an edge of the opening from the plasma.

26. A device as recited in claim 25 wherein the housing has a length, L, parallel to the axis and the opening extends greater than 50 percent of the length of the housing (Daxial > 0.5 L).

27. A device as recited in claim 25 wherein the device further comprises a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

28. A device as recited in claim 25 wherein the plasma-forming target material on the surface comprises frozen Xenon.

29. A device as recited in claim 25 wherein the device further comprises a mechanism to rotate the cylindrically-symmetric element about the axis and

translate the cylindrically-symmetric element along the axis.

30. A device as recited in claim 25 wherein the opening extends in a direction normal to the axis from a first edge to a second edge with each edge positioned out of a line of sight with the plasma.

31. A device as recited in claim 25 wherein the opening has a length, Daxial, in

a direction parallel to the axis and a width, Dlateral, in a direction normal to the axis, with Daxial > Dlateral.

32. A device as recited in claim 25 further comprising a cover plate overlying a portion of the opening and attached to the housing on at least one side of the

opening with at least one fastener to allow replacement of a damaged cover plate.

33. An EUV light source comprising:

a system generating plasma from a Xenon target material at a plasma site in a chamber, the plasma producing radiation traveling along an optical pathway toward an intermediate location, the plasma producing ions exiting the plasma

and wherein the system introduces between 0.4 standard liters per minute (slm)

and 4.0 slm of Xenon target material gas into the chamber;

a component distanced from the plasma site by a closest distance, d; a flowing gas disposed between the plasma and the component, the gas establishing an average gas pressure, P, over the distance, d, sufficient

to reduce ion energy below 100eV before the ions reach the component;

at least one outlet configured to receive buffer gas flowing from a fluidically coupled gas source; and

at least one pump removing gas from the chamber, the pump and outlet cooperating to reduce Xenon target material gas concentration along the optical

pathway from the plasma to the intermediate location.

34. An EUV light source as recited in claim 33 wherein the component is a mirror reflecting EUV radiation from the plasma site to the intermediate location and wherein the at least one outlet establishes a buffer gas flow rate away from

the mirror between 0.5 standard liters per minute (slm) and 20.0 slm.

35. An EUV light source as recited in claim 33 wherein the device further

comprises a flow directing structure to direct flow from the at least one outlet.

36. An EUV light source as recited in claim 35 wherein the component is a mirror reflecting EUV radiation from the plasma site to the intermediate location and wherein the flow directing structure comprises at least one vane positioned between the mirror and the plasma site to direct flow from at least one outlet.

37. An EUV light source as recited in claim 35 wherein the flow directing

structure comprises a tubular flow guide.

38. An EUV light source as recited in claim 33 wherein the buffer gas is selected from the group of buffer gases consisting of Hydrogen, Helium,

Argon, Nitrogen and combinations thereof.

39. An EUV light source as recited in claim 33 wherein the system is a

laser produced plasma system having a drive laser irradiating Xenon target material

formed into discrete targets selected from the group of discrete targets consisting of discrete target material droplets and discrete target material pellets.

40. An EUV light source as recited in claim 33 wherein the system is a laser produced plasma system having a drive laser irradiating Xenon target material

coated on a surface of a rotatable, cylindrically-symmetric element.

41. An EUV light source as recited in claim 33 wherein at least one outlet cooperates with at least one pump to produce a transversely directed flow between the component and the plasma site to push Xenon target material gas

out of the optical pathway.

42. An EUV light source as recited in claim 33 wherein the device further comprises a flow guide at the intermediate location and wherein at least one outlet directs buffer gas into the flow guide to reduce the concentration of Xenon

target material gas along the optical pathway.

43. An EUV light source as recited in claim 33 wherein the radiation includes EUV radiation having a wavelength of 13.5nm.

44. An EUV light source as recited in claim 33 further comprising a partition in the chamber to establish a preselected gas flow pattern in the chamber.

45. An EUV light source as recited in claim 33 wherein the buffer gas has a higher EUV transmission than the Xenon target material gas.