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1. KR1020040028713 - METHOD FOR THERMALLY TREATING A SUBSTRATE THAT COMPRISES SEVERAL LAYERS

Office
République de Corée
Numéro de la demande 1020037009953
Date de la demande 28.07.2003
Numéro de publication 1020040028713
Date de publication 03.04.2004
Type de publication A
CIB
H01L 21/324
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
30Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes H01L21/20-H01L21/26162
324Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p.ex. recuit, frittage
CPC
H01S 5/18352
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18344characterized by the mesa, e.g. dimensions or shape of the mesa
18352Mesa with inclined sidewall
H01L 21/31683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
3165formed by oxidation
31683of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
Déposants MATTSON THERMAL PRODUCTS GMBH
맷슨 써멀 프로덕츠 게엠베하
Inventeurs CHUNG HIN YIU
충,힌,위
ROTERS GEORG
로터스,게오르크
Mandataires 남상선
Données relatives à la priorité 10140791 20.08.2001 DE
Titre
(EN) METHOD FOR THERMALLY TREATING A SUBSTRATE THAT COMPRISES SEVERAL LAYERS
(KO) 다층 기판을 열처리하기 위한 방법
Abrégé
(EN)

The aim of the invention is to stop the progression of a lateral oxidation of a layer of a multi-layer substrate at a defined point. To achieve this aim, the invention provides a method for thermally treating a substrate that comprises several layers, especially a semiconductor wafer, according to which a substrate layer that is covered from above and from below is oxidized from the lateral edges thereof to the center in such a manner that a defined center portion is not oxidized. The inventive method comprises the following steps: heating the substrate in a process chamber to a defined treatment temperature; introducing a hydrogen-rich water vapor into the process chamber for a defined period of time; and introducing dry oxygen or an oxygen-rich water vapor into the process chamber once the defined period of time has expired. The hydrogen-rich water vapor can be introduced into the process chamber either before, during and/or after the substrate is heated.

© KIPO & WIPO 2007

(KO)
본 발명은 다층 기판, 특히 반도체 웨이퍼의 열처리 방법에 관한 것이다. 본 발명에 따른 방법에 의해, 위·아래로부터 커버된 하나의 기판 층이 규정된 중간 영역은 산화되지 않는 방식으로 상기 기판의 측면 에지에서부터 내부로 가면서 산화되고, 상기 기판을 프로세스 챔버 내에서 예정된 처리 온도로 가열하는 단계; 상기 프로세스 챔버 내로 예정된 시간동안 수소를 다량 함유한 수증기를 유입하는 단계; 및 예정된 시간이 흐른 후에, 건조한 산소, 즉 순수 산소(O 원자 및/또는 O분자 및/또는 O분자의 형태), 상기 기판의 층들과 화학적으로 반응하지 않는 불활성 가스와 산소로 이루어진 혼합물, 또는 수분을 함유하지 않는 산소 함유 화합물, 또는 산소를 다량 함유한 수증기를 상기 프로세스 챔버 내로 유입하는 단계를 포함하며, 상기 수소를 다량 함유한 수증기를 프로세스 챔버 내로 유입하는 것이 상기 기판이 가열되는 동안 및/또는 가열된 후에 실시될 수 있다. 2 3