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1. WO2020160092 - GRAVURE PAR FAISCEAU D'IONS AVEC TRAITEMENT ET IMPULSION À GAZ

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

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CLAIMS

What is claimed is:

1. A method of ion beam etching a substrate, the method comprising:

generating an ion beam of an inert gas from an ion beam source chamber;

applying the ion beam of the inert gas to a substrate in a processing chamber outside the ion beam source chamber, wherein the ion beam etches one or more layers of a magnetic random access memory (MRAM) stack on the substrate; and

introducing a reactive gas directly into the processing chamber and towards the substrate.

2. The method of claim 1, wherein the reactive gas includes a carbon-containing gas having a hydroxyl group.

3. The method of claim 2, wherein the carbon-containing gas is selected from a group consisting of: an alcohol, a carboxylic acid, an organic hydroperoxide, a hemiacetal, and a hemiketal.

4. The method of claim 3, wherein the carbon-containing gas includes methanol.

5. The method of claim 1, wherein the reactive gas includes a fluorine-containing gas or a nitrogen-containing gas.

6. The method of claim 1, wherein the MRAM stack includes an MTJ stack, wherein the MTJ stack includes a top magnetic layer, a bottom magnetic layer, and a tunnel barrier layer between the top magnetic layer and the bottom magnetic layer.

7. The method of claim 1, wherein sidewalls of the MRAM stack after etching the one or more layers and after introducing the reactive gas are substantially free of re-deposited etched byproducts.

8. The method of claim 1, wherein applying the ion beam comprises applying the ion beam continuously to etch the one or more layers of the MRAM stack.

9. The method of claim 8, wherein introducing the reactive gas occurs simultaneously with applying the ion beam, wherein introducing the reactive gas comprises

continuously flowing the reactive gas directly into the processing chamber.

10. The method of claim 8, wherein introducing the reactive gas occurs simultaneously with applying the ion beam, wherein introducing the reactive gas comprises pulsing the reactive gas directly into the processing chamber.

11. The method of claim 1, wherein applying the ion beam comprises pulsing the ion beam to etch the one or more layers of the MRAM stack.

12. The method of claim 11, wherein introducing the reactive gas occurs simultaneously with applying the ion beam, wherein introducing the reactive gas comprises continuously flowing the reactive gas directly into the processing chamber.

13. The method of claim 11, wherein introducing the reactive gas comprises pulsing the reactive gas directly into the processing chamber.

14. The method of claim 11, wherein an amplitude of the ion beam is modulated over time when pulsing the ion beam.

15. The method of any one of claims 1-14, wherein introducing the reactive gas comprises flowing the reactive gas during an initial processing time interval when etching the one or more layers of the MRAM stack.

16. The method of any one of claims 1-14, wherein introducing the reactive gas comprises flowing the reactive gas during an ending processing time interval when etching the one or more layers of the MRAM stack.

17. The method of any one of claims 1-14, wherein introducing the reactive gas comprises flowing the reactive gas during a middle processing time interval when etching the one or more layers of the MRAM stack.

18. The method of any one of claims 1-14, wherein a pressure of the reactive gas in the processing chamber is between about 0.1 mTorr and about 0.6 mTorr.

19. A method of ion beam etching a substrate, the method comprising:

generating an ion beam of an inert gas in an ion beam source chamber; and

pulsing the ion beam of the inert gas to a substrate in a processing chamber outside the ion beam source chamber, wherein the ion beam etches one or more layers of a magnetic random access memory (MRAM) stack on the substrate.

20. The method of claim 19, wherein an amplitude of the ion beam is modulated over time when pulsing the ion beam.

21. The method of claim 19 or 20, further comprising:

introducing a reactive gas directly into the processing chamber towards the substrate.

22. The method of claim 21, wherein the reactive gas includes a carbon-containing gas having a hydroxyl group, wherein the carbon-containing gas is selected from a group consisting of: an alcohol, a carboxylic acid, an organic hydroperoxide, a hemiacetal, and a hemiketal.

23. The method of claim 21, wherein the reactive gas is flowed continuously.

24. The method of claim 21, wherein the reactive gas is pulsed.

25. The method of claim 24, wherein the ion beam of the inert gas and the reactive gas are alternatingly pulsed into the processing chamber.

26. The method of claim 21, wherein the reactive gas is flowed during an initial processing time interval when etching the one or more layers of the MRAM stack.

27. The method of claim 21, wherein the reactive gas is flowed during an ending

processing time interval when etching the one or more layers of the MRAM stack.

28. The method of claim 21, wherein the reactive gas is flowed during a middle processing time interval when etching the one or more layers of the MRAM stack.

29. An apparatus for performing ion beam etching of a substrate, the apparatus comprising:

an ion beam source chamber;

a processing chamber coupled to the ion beam source chamber, wherein the processing chamber is configured to support a substrate located therein, wherein a magnetic random access memory (MRAM) stack includes one or more layers disposed on the substrate;

a gas delivery system coupled to the processing chamber; and

a controller configured to provide instructions to perform the following operations:

generate an ion beam of an inert gas in the ion beam source chamber;

apply the ion beam of the inert gas to the substrate in the processing chamber, wherein the ion beam etches the one or more layers of the MRAM stack on the substrate; and

introduce a reactive gas through the gas delivery system and directly into the processing chamber towards the substrate.

30. The apparatus of claim 29, wherein the ion beam is pulsed and the reactive gas is flowed continuously.

31. The apparatus of claim 29, wherein the ion beam is continuous and the reactive gas is pulsed.

32. The apparatus of claim 29, wherein the ion beam is pulsed and the reactive gas is pulsed.

33. The apparatus of claim 29, wherein the ion beam and the reactive gas are alternatingly pulsed into the processing chamber.

34. The apparatus of any one of claims 29-33, wherein the reactive gas is flowed during an initial processing time interval when etching the one or more layers of the MRAM stack.

35. The apparatus of any one of claims 29-33, wherein the reactive gas is flowed during an ending processing time interval when etching the one or more layers of the MRAM stack.

36. The apparatus of any one of claims 29-33, wherein the reactive gas is flowed during a middle processing time interval when etching the one or more layers of the MRAM stack.