Traitement en cours

Veuillez attendre...

PATENTSCOPE sera indisponible durant quelques heures pour des raisons de maintenance le mardi 27.07.2021 à 12:00 PM CEST
Paramétrages

Paramétrages

Aller à Demande

1. WO1984001240 - STRUCTURE DE TRAVERSEE POUR DISPOSITIFS MICROELECTRONIQUES TRIDIMENSIONNELS

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]
CLAIMS

What is Claimed is ;

1. In a semiconductor substrate having a first major surface and a second major surface and a feedthrough structure extending through said substrate
from said first major surface to said second major
surface, the improvement comprising:
an epitaxial layer, of the same conductivity type as said substrate, applied to at least one of said first and second major surfaces covering said feedthrough structure and forming a new major surface; and
a first conductive path of the same conductivity type as said feedthrough structure formed in said epitaxial layer and extending from said new major surface to the underlying major surface of said substrate;
said first conductive path being in electrical communication with said feedthrough structure and having a cross-sectional area substantially less than the
cross-sectional area of said feedthrough structure.

2. The improvement according to Claim 1 further comprising a second conductive path having a first end and a second end:
said first end joining said second path to said feedthrough structure and said second end joining said second path to said first path;
whereby said first path is in electrical
communication with said feedthrough structure.

3. The improvement according to Claim 1 or
Claim 2 wherein said feedthrough structure is formed by the thermal gradient zone melt process.

4. The improvement according to Claim 1 or
Claim 2 wherein said first conductive path is formed
by diffusion.

5. A method for reducing the surface area occupied by the feedthrough structure of a semiconductor substrate comprising the steps of:
applying a relatively thin epitaxial layer of the same conductivity type as said substrate to a
major surface of said substrate so as to cover said
feedthrough structure and form a new major surface;
forming an electrically conductive path
through said epitaxial layer and extending from said
new major surface to the underlying major surface of
said substrate;
said electrically conductive path being in
electrical communication with said feedthrough structure.

6. A method for reducing the surface area occupied by the feedthrough structure of a semiconductor substrate comprising the steps of:
forming a first electrically conductive path in a major surface of said substrate, said first
electrically conductive path having a first end joining said feedthrough structure and a second end located
remote from said feedthrough structure;
applying a relatively thin epitaxial layer, of the same conductivity type as said substrate, to said major surface so as to cover said feedthrough structure and said first electrically conductive path and forming a new major surface; and

. OMPI forming a second electrically conductive path through said epitaxial layer and extending from said
new major surface to the underlying second end of said first electrically conductive path; with the cross-sectional area of said second electrically conductive
path being much less than that of the feedthrough
structure;
whereby said second electrically conductive
path is in electrical communication with said feedthrough structure and occupies less area of said new major surface than said feedthrough structure occupied of the original uncovered major surface of said substrate.

7. The method of Claim 6 wherein said second
electrically conductive path is formed by diffusion.

OMPI