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1. WO1991007688 - STRUCTURES DE SEMI-CONDUCTEURS

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

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CLAIMS

1. A semi-conductor structure characterised in that it comprises at least one epilayer of semi-conductor formed on a surface of a substrate, and at least one epilayer of semi-conductor formed on an opposite surface of the substrate.

2. An opto-electronic component including a semi-conductor structure as claimed in claim 1 characterised in that an opto-electronic device is formed on one surface of the structure

" and an opto-electronic or electronic device is formed on the opposite surface of the structure.

3. A multiple quantum well structure characterised in that it comprises a stack of quantum wells located on one . surface of a substrate, and at least one epilayer of semi-conductor formed on an opposite surface of the substrate.

4. A multiple quantum well structure characterised in that it comprises stacks of quantum wells located on opposite surfaces of a substrate.

5. A multiple quantum well structure as claimed in claims 3 or 4 characterised in that the quantum well stacks each contain between 20 and 200 quantum wells.

6. A multiple quantum well structure as claimed in claims 3 or 4 characterised in that the quantum well stacks each contain in the region of 100 quantum wells.

7. A multiple quantum well structure as claimed in any one of claims 3-6 characterised in that the substrate is n or n+ doped indium phosphide and the multiple quantum wells are formed from an indium gallium arsenide/indium phosphide system.

8. A multiple quantum well structure as claimed in any one of claims 3-5 characterised in that the substrate is gallium phosphide and the multiple quantum wells are formed from the gallium aluminium arsenide/gallium arsenide system.

9. A multiple quantum well structure as claimed in any one of claims 3-5 in which the substrate is silicon.

10. A multiple quantum well structure as claimed in any one of claims 3-5 in which the substrate is gallium phosphide.

11. An optical modulator comprising a multiple quantum well structure as claimed in any of claims 3-10.

12. An optical modulator as claimed in claim 11 which, in use, operates in transmission mode.

13. A three terminal opto-electronic device comprising an epilayer structure as claimed in any previous claim.

14. A semi-conductor structure, quantum well structure, modulator, or opto-electronic device as claimed in any previous claim formed by gas source molecular beam epitaxy.

15. A semi-conductor structure, quantum well structure, modulator, or opto-electronic device as claimed in any previous claim formed by vapour phase epitaxy.

16. A semi-conductor structure, quantum well structure, modulator or opto-electronic device as claimed in any previous claim formed by metal organic vapour phase epitaxy.

17. A semi-conductor structure, quantum well structure, modulator or opto-electronic device as claimed in any previous claim formed by either metal organic molecular beam epitaxy or chemical beam epitaxy.

18. An array of semi-conductor structures, multiple quantum well structures, modulators, or opto-electronic devices as claimed in any previous claim, formed on a common substrate.

19. A semi-conductor structure, multiple quantum wells structure, modulator, or opto-electronic device as claimed in any previous claim mounted on a pair of chip carriers connected back-to-back and having aligned holes for light transmission.

20. A three level optical logic system incorporating a semi-conductor structure as claimed in any one of claims 1-10.

21. A neural network incorporating a semi-conductor structure or multiple quantum well structure as claimed in any of claims 1-10.

22. A detector-modulator array pair incorporating a multiple quantum well structure as claimed in any of claims 2-10 or 19.

23. A method of making a multiple quantum well structure as claimed in claims 3-11 in which multiple quantum wells are formed in turn on both sides of a substrate by gas source molecular beam epitaxy, and in which a patterned mask is formed on one side of the substrate through which a dopant is diffused or ion implanted and a second patterned mask aligned with the first mask is formed on the other side of the substrate through which second mask a dopant is diffused or ion implanted.

24. A wafer of semi-conductor material comprising a substrate having a plurality of epilayers formed on one principal surface thereof and at least one epilayer formed on the other principal surface thereof, the plurality of epilayers constructed to act as a plurality of quantum wells.

25. A wafer of semi-conductor material comprising a substrate having pluralities of epilayers formed on each principal surface thereof, each of said pluralities of epilayers constructed to act as a plurality of quantum wells.

26. A multiple quantum well structure substantially as herein before described with reference to Figure 1.

27. A detector modulator pair incorporating a multiple quantum well structure substantially as herein before described with reference to Figure 3.