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1. (WO2019046629) SEMICONDUCTOR DEVICES, HYBRID TRANSISTORS, AND RELATED METHODS
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CLAIMS

What is claimed is:

1. A semiconductor device, comprising:

a hybrid transistor including:

a gate electrode;

a drain material;

a source material; and

a channel material operatively coupled between the drain material and the source material, wherein the source material and the drain material include a low bandgap high mobility material relative to the channel material that is high bandgap low mobility material.

2. The semiconductor device of claim 2, wherein the source material and the drain material include a doped semiconductor material.

3. The semiconductor device of claim 2, wherein the channel material includes an oxide semiconductor material.

4. The semiconductor device of claim 3, wherein the oxide semiconductor material includes ZTO, IGZO, IZO, ZnOx, InOx, In203, Sn02, TiOx, ZnxOyNz, MgxZnyOz, InxZnyOz, InxGayZnzOa, ZrxInyZnzOa, HfxInyZnzOa, SnxInyZnzOa, AlxSnylnzZnaOd, SixInyZnzOa, ZnxSnyOz, AlxZnySnzOa, GaxZnySnzOa,

ZrxZnySnzOa, InGaSiO.

5. The semiconductor device of claim 4, wherein the doped semiconductor material is selected from the group consisting of Si, GE, SiGe, SiCo, and TMD.

6. The semiconductor device of claim 3, wherein the channel material has a length that is less than a length of the gate electrode.

7. The semiconductor device of claim 6, wherein each of the source material and the drain material extend into a channel region defined by the length of the gate electrode.

8. The semiconductor device of claim 7, wherein portions of the source material and the drain material that extend into the channel region have a lower doping concentration than a higher doping concentration of portions of the source material and the drain material outside of the channel region.

9. The semiconductor device of claim 1, wherein the transistor is configured in a vertical orientation.

10. The semiconductor device of claim 9, wherein the channel material is tapered from the source material to the drain material.

11. The semiconductor device of claim 1, wherein the transistor is configured in a planar orientation.

12. The semiconductor device of claim 1, wherein a bandgap from the channel material to the source material, and from the channel material to the drain material is uniformly graded.

13. A semiconductor device, comprising:

a hybrid transistor comprising:

a channel region defined by a length of an adjacent gate electrode, the channel region including at least a high bandgap low mobility material; and a drain region and a source region disposed on opposing ends of the channel region, the drain region and the source region each including at least a low bandgap high mobility material.

14. The semiconductor device of claim 13, wherein the transistor further comprises a gate electrode.

15. The semiconductor device of claim 14, wherein the gate electrode is one of a single gate electrode or a dual gate electrode.

16. The semiconductor device of claim 13, further comprising a memory cell incorporating the hybrid transistor as its access transistor.

17. The semiconductor device of claim 13, further comprising a memory array incorporating the memory cell.

18. The semiconductor device of claim 17, wherein the memory array is selected from the group consisting of random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), flash memory , resistive random access memory (ReRAM), conductive bridge random access memory (conductive bridge RAM), magnetoresistive random access memory (MRAM), phase change material (PCM) memory, phase change random access memory (PCRAM), spin-torque-transfer random access memory (STTRAM), oxygen vacancy-based memory, programmable conductor memory , and ferroelectric random access memory (FE-RAM).

19. The semiconductor device of claim 13, wherein the hybrid transistor is a select device for a memory component selected from the group consisting of a deck of memory cells and a back end of line routing component.

20. The semiconductor device of claim 18, wherein the low bandgap high mobility material of the source region comprises a first doped semiconductor material, and the drain region comprises a second doped semiconductor material.

21. The semiconductor device of claim 20, wherein the high bandgap low mobility material comprises an undoped oxide semiconductor material.

22. The semiconductor device of claim 20, wherein the first doped

semiconductor material and the second doped semiconductor material each comprise a same type of doped semiconductor material.

23. The semiconductor device of claim 20, wherein the source region includes a first conductive material in contact with the first doped semiconductor material, and the drain region includes a second conductive material in contact with the second doped semiconductor material.

24. The semiconductor device of claim 13, wherein the channel region is a hybrid channel region including at least a portion of the low bandgap high mobility material extending from either the drain region or the source region into the hybrid channel region.

25. The semiconductor device of claim 24, wherein at least a portion of the low bandgap high mobility material extends from both the drain region and the source region into the hybrid channel region.

26. The semiconductor device of claim 13, wherein the channel region is a hybrid channel region including another low bandgap high mobility material disposed between opposing portions of the high bandgap low mobility material.

27. A method of forming a semiconductor device, the method comprising: forming a hybrid transistor supported by a substrate comprising:

forming a source including a first low bandgap high mobility material;

forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material;

forming a drain including a second low bandgap high mobility material coupled with the a high bandgap low mobility material; and

forming a gate separated from the channel via a gate oxide material.

28. The method of claim 27, wherein forming the transistor supported by the substrate includes forming a vertically configured transistor including forming the source, the channel, and the drain stacked on the substrate in a vertical orientation.

29. The method of claim 27, wherein forming the transistor supported by the substrate includes forming a horizontally configured transistor including forming the source, the channel, and the drain on the substrate in a horizontal orientation.

30. The method of claim 27, wherein forming the channel includes forming the high bandgap low mobility material to have a length that is shorter than a length of the gate electrode.

31. The method of claim 27, wherein the first low bandgap high mobility material is a first doped semiconductor material, the second first low bandgap high mobility material is a second doped semiconductor material, and the high bandgap low mobility material is an oxide semiconductor material.

32. The method of claim 31, wherein the gate oxide material includes Si02, a high-K material, or a combination thereof.

33. A method of operating a memory cell, the method comprising enabling a hybrid transistor by applying a gate voltage to a gate electrode to cause a drive current to flow through a channel region coupled between a source region and a drain region, the channel region including a high bandgap low mobility material relative to the source region and drain region each including a low bandgap high mobility material.