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1. (WO2019046064) METHOD OF ETCHING MAGNETORESISTIVE STACK
Nota: Texto obtenido mediante procedimiento automático de reconocimiento óptico de caracteres.
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CLAIMS

What is claimed is:

1. A method of fabricating a magnetoresistive bit from a magnetoresistive stack including at least two magnetic regions, an intermediate region positioned between two magnetic regions of the at least two magnetic regions, and a surface region, the method comprising:

(a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction;

(b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction, wherein the first set of exposed areas and the second set of exposed areas have multiple areas that overlap; and

(c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.

2. The method of claim 1, wherein the first set of exposed areas includes multiple substantially parallel strips that extend in the first direction, and the second set of exposed areas includes multiple substantially parallel strips that extend in the second direction.

3. The method of claim 1, wherein the first set of exposed areas includes multiple strips arranged substantially parallel to and spaced substantially equidistant from each other, and the second set of exposed areas includes multiple strips arranged substantially parallel to and spaced substantially equidistant from each other, and wherein the first direction is transverse to the second direction.

4. The method of claim 1, wherein creating the first set of exposed areas includes:

creating a first plurality of substantially parallel strips extending in the first direction; and

creating a second plurality' of substantially parallel strips extending in the first direction, wherein the parallel strips of the second plurality of substantially parallel strips are substantially equally spaced apart from the parallel strips of the first plurality of substantially parallel strips.

5. The method of cl aim 1 , wherein

(i) creating the first set of exposed areas includes:

creating a first plurality of substantially parallel strips that are substantially equally spaced apart and extend in the first direction,

creating a second plurality of substantially parallel strips that are substantially equally spaced apart and extend in the first direction, wherein each parallel strip of the second plurality of substantially parallel strips are positioned between two parallel strips of the first plurality of substantially parallel strips, and

(ii) creating the second set of exposed areas include:

creating a third plurality of substantially parallel strips that are substantially equally spaced apart and extend in the second direction, and

creating a fourth plurality of substantially parallel strips that are substantially equally spaced apart and extend in the second direction, wherein each parallel strip of the fourth plurality of substantially parallel strips are positioned between two parallel strips of the third plurality of substantially parallel strips.

6. The method of claim 1, wherein the surface region includes multiple stacked layers.

7. The method of claim 1 , wherein the surface region includes a first layer disposed over a second layer, wherein the first layer has a higher etch rate than the second layer.

8. The method of claim 1 , wherein the surface region includes a first layer having a higher etch rate to a chemical reagent disposed over a second layer having a lower etch rate to the chemical reagent, and wherein the etching in (a) and (b) includes etching through the first layer of the surface region using an etching process that utilizes the chemical reagent.

9. The method of claim 1, wherein the surface region includes a first layer having a higher etch rate to a chemical reagent disposed over a second layer having a lower etch rate to the chemical reagent, and wherein the etching in (a) and (b) includes etching through the first layer of the surface region, and the etching in (c) includes etching through at least the second layer of the surface region.

10. The method of claim 1, wherein the surface region includes a first layer disposed above a second layer and a third layer disposed below the second layer, and wherein the first and the third layers have a higher etch rate than the second layer.

11. The method of claim 1 , wherein the etching in (a) and (b) is an etching process utilizing a chemical reagent, and the etching in (c) is a physical etching process.

12. A method of fabricating a magnetoresistive bit from a magnetoresistive stack including at least two magnetic regions, an intermediate region positioned between two magnetic regions of the at least two magnetic regions, and a multi-layer surface region, the method comprising:

(a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of a plurality* of substantially parallel strips extending in a first direction;

(b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of a plurality of substantially parallel strips extending in a second direction transverse to the first direction; and

(c) after the etching in (a) and (b), etching Ihrough at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.

13. The method of claim 12, wherein the multi-layer surface region includes at least a first layer disposed over a second layer, the first layer having a higher etch rate than the second layer to a same chemical reagent, and wherein the etching in (a) and (b) includes etching through the first layer.

14. The method of claim 12, wherein the multi-layer surface region includes at least a first layer disposed over a second layer, the first layer having a higher etch rate than the second layer to a same chemical reagent, and wherein (i) the etching in (a) and (b) includes etching through the first layer using an etching process utilizing the chemical reagent, and (ii) the etching in (c) includes etching through the second layer using a physical etching process.

15. The method of claim 12, wherein (i) the etching in (a) and (b) uses reactive ion etching, and (ii) the etching in (c) uses ion beam etching.

16. The method of claim 13, wherein the multi-layer surface region includes a first layer disposed above a second layer and a third layer disposed below the second layer, and wherein the first and the third layers have a higher etch rate than the second layer to a same chemical reagent.

17. The method of claim 12, wherein the multi-layer surface region includes a first layer disposed above a second layer, and wherein, after the etching in (a) and (b), the first layer forms an array of substantially square or substantially rectangular shapes.

18. The method of claim 12, wherein the multi-layer surface region includes a first layer disposed above a second layer, and wherein, after Ihe etching in (a) and (b), the first layer forms an array of substantially square or substantially rectangular shapes, and the method further includes further etching the first layer to smooth at least some of the comers of the substantially square or substantially rectangular shapes.

19. A method of fabricating a magnetoresistive bit from a magnetoresistive stack including at least two magnetic regions, an intermediate region positioned between two magnetic regions of the at least two magnetic regions, and a surface region including at least a first layer having a higher etch rate to a chemical reagent disposed over a second layer having a lower etch rate to the chemical reagent, the method comprising:

(a) etching through the first layer of the surface region using an etching process utilizing the chemical reagent to create a first set of exposed areas in the form of a plurality of substantially parallel strips that are substantially equally spaced apart and extending in a first direction;

(b) etching through the first layer of the surface region using an etching process utilizing the chemical reagent to create a second set of exposed areas in the form of a plurality of substantially parallel strips that are substantially equally spaced apart and extending in a second direction transverse to the first direction; and

(c) after the etching in (a) and (b), etching through at least the second layer using a physical etching process through the first set and second set of exposed areas.

20. The method of claim 19, wherein

(i) creating the first set of exposed areas include:

creating a first plurality of substantially parallel strips that are substantially equally spaced apart and extend in the first direction,

creating a second plurality of substantially parallel strips that are substantially equally spaced apart and extend in the first direction, wherein each parallel strip of the second plurality of substantially parallel strips are positioned between two parallel strips of the first plurality of substantially parallel strips, and

(ii) creating the second set of exposed areas include:

creating a third plurality of substantially parallel strips that are substantially equally spaced apart and extend in the second direction, and

creating a fourth plurality of substantially parallel strips that are substantially equally spaced apart and extend in the second direction, wherein each parallel

strip of the fourth plurality of substantially parallel strips are positioned between two parallel strips of the third plurality of substantially parallel strips.