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1. (WO2019042559) OPTOELECTRONIC COMPONENT
Nota: Texto obtenido mediante procedimiento automático de reconocimiento óptico de caracteres.
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CLAIMS

An optoelectronic component (1) comprising a carrier (2), an optoelectronic chip (3), an optically active layer (4, 10), wherein the optoelectronic chip (3) is mounted on a top of the carrier (2), wherein a barrier layer (6) is arranged at a top of the optically active layer (4, 10), and wherein the barrier layer (6) comprises silicon dioxide .

The optoelectronic component (1) of claim 1, wherein the thickness of the barrier layer (6) is within the range between 0.5 and 100 microns, particularly between 0.5 and 20 microns.

The optoelectronic component (1) of claims 1 or 2, wherein the optically active layer is a converter layer (4) arranged on top of the optoelectronic chip (3) , wherein the optoelectronic component (1) further comprises a transparent cover layer (5) , wherein the converter layer (4) is arranged above the optoelectronic chip (3), wherein the transparent cover layer (5) is arranged on top of the converter layer (4), wherein the barrier layer (6) is arranged between the converter layer (4) and the transparent cover layer (5) .

The optoelectronic component (1) of claim 3, wherein the converter layer (4) comprises a silicone based first matrix material (11) with converter particles (12) .

The optoelectronic component (1) of claim 4, wherein the barrier layer (6) is made of oxidized silicone.

The optoelectronic component (1) of any of the claims 3 to 5, wherein the carrier (2) is partly covered with a reflecting layer (10), wherein the converter layer (4) is arranged above the reflecting layer (10) .

The optoelectronic component (1) of claims 1 or 2, wherein the optically active layer is a reflecting layer (10), wherein the carrier (2) is at least partly covered by the reflecting layer (10) .

The optoelectronic component (1) of claim 7, wherein the optoelectronic chip (3) is attached to the carrier (2) by a conductive adhesive (14), wherein the reflecting layer

(10) comprises a silicon based second matrix material

(15) comprising reflective particles (16).

The optoelectronic component (1) of claim 8, wherein the barrier layer (6) is made of oxidized silicone.

The optoelectronic component (1) of claims 8 or 9, wherein the reflecting particles (16) comprise titanium dioxide .

The optoelectronic component (1) of claims 8 to 10, further comprising a converter layer (4) and a transparent cover layer (5), wherein the converter layer (4) is arranged above the optoelectronic chip (3) , wherein the transparent cover layer (5) is arranged on top of the converter layer (4), wherein another barrier layer (17) is arranged between the converter layer (4) and the transparent cover layer (5) , and wherein the other barrier layer (17) comprises silicon dioxide.

The optoelectronic component (1) of claim 11, wherein the converter layer (4) comprises a silicone based first matrix material (11) with converter particles (12) .

13. The optoelectronic component (1) of claim 12, wherein the other barrier layer (17) is made of oxidized silicone.

A method of producing an optoelectronic component (1) comprising the steps:

- Providing a carrier (2);

- Mounting an optoelectronic chip (3) on a top of the carrier (2 ) ;

- Depositing of a converter layer (4) on top of the optoelectronic chip (3) ;

- Forming of a barrier layer (6), wherein the barrier layer (6) comprises silicon dioxide;

- Arranging a transparent cover layer (5) on top of the barrier layer (6) .

The method of claim 14, wherein the converter layer (4) comprises a silicone based first matrix material (11) with converter particles (12), and wherein the barrier layer (6) is formed by an oxidation process of the first matrix material (11) due to an oxygen plasma.

A method of producing an optoelectronic component (1) comprising the steps:

- Providing a carrier (2);

- Mounting an optoelectronic chip (3) on a top of the carrier (2 ) ;

- Depositing of a reflecting layer (10), partly covering the carrier (2);

- Forming of a barrier layer (6), wherein the barrier layer (6) comprises silicon dioxide.

The method of claim 16, wherein the optoelectronic chip (3) is mounted to the carrier (2) using a conductive adhesive ( 14 ) .

The method of claims 16 or 17, wherein the reflecting layer (10) comprises a silicon based second matrix material (15) comprising reflecting particles (16), particularly titanium oxide particles, and wherein the barrier layer (6) is formed by an oxidation process of the second matrix material (15) due to an oxygen plasma.

The method of claim 15 or 18, wherein the oxygen plasma is a low-pressure plasma with an oxygen flow in the range between 40 and 80 standard cubic centimeters per minute, wherein a power within the range of 300 to 700 watt is applied to the oxygen plasma, and wherein the oxygen plasma is applied for a time within the range of 150 to 450 seconds.

The method of claim 19, wherein the oxygen flow is in the range between 45 and 55 standard cubic centimeters per minute, wherein the power is within the range of 450 to 550 watt, and wherein the oxygen plasma is applied for a time within the range of 270 to 330 seconds.