Colecciones nacionales e internacionales de patentes

1. (WO2018063346) METHODS AND APPARATUS TO REMOVE EPITAXIAL DEFECTS IN SEMICONDUCTORS

Pub. No.:    WO/2018/063346    International Application No.:    PCT/US2016/054846
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Sat Oct 01 01:59:59 CEST 2016
IPC: H01L 21/78
H01L 21/02
H01L 21/768
H01L 21/762
H01L 21/302
Applicants: INTEL CORPORATION
Inventors: LILAK, Aaron D.
MEHANDRU, Rishabh
MORROW, Patrick
KEYS, Patrick H.
Title: METHODS AND APPARATUS TO REMOVE EPITAXIAL DEFECTS IN SEMICONDUCTORS
Abstract:
Methods and apparatus to remove epitaxial defects in semiconductors are disclosed. A disclosed example multilayered die structure includes a fin having a first material, where the fin is epitaxially grown from a first substrate layer having a second material, and where a defect portion of the fin is etched or polished. The disclosed example multilayered die structure also includes a second substrate layer having an opening through which the fin extends.