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1. US20120173827 - Apparatus, system, and method for using multi-level cell storage in a single-level cell mode

Oficina Estados Unidos de América
Número de solicitud 13175637
Fecha de la solicitud 01.07.2011
N.º de publicación 20120173827
Fecha de publicación 05.07.2012
Número de concesión 08266503
Fecha de concesión 11.09.2012
Tipo de publicación B2
CIP
G FISICA
11
REGISTRO DE LA INFORMACION
C
MEMORIAS ESTATICAS
29
Verificación del funcionamiento correcto de memorias; Ensayo de memorias durante su funcionamiento fuera de línea (offline")o en espera ("standby")
G11C 29/00
CPC
G11C 11/5621
G11C 11/5628
G11C 11/5642
G11C 16/0483
G11C 16/10
G11C 16/26
Solicitantes Fusion-io
Inventores Wood Robert
Hyun Jea Woong
Mandatarios Holman Jeffrey T.
Título
(EN) Apparatus, system, and method for using multi-level cell storage in a single-level cell mode
Resumen
(EN)

A controller is used for an electronic memory device which has multi-level cell (MLC) memory elements. Each MLC memory element is capable of storing at least two bits. The controller includes a physical interface to couple the controller to the electronic memory device. The controller also includes a processing unit coupled to the physical interface. The processing unit operates the electronic memory device in a single-level cell (SLC) mode using a restricted number of programming states for a single data bit. The restricted number of programming states includes a first state which is an erase state. The restricted number of programming states also includes a second state, other than the erase state, which is closest to a natural threshold voltage of the MLC memory elements.