20160118252 Method Of Forming Silicon On A Substrate||US||28.04.2016|
||14787221||TECHNISCHE UNIVERSITEIT DELFT||Ryoichi Ishihara|
A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon.
20160118265 Spectrally and Temporally Engineered Processing using Photoelectrochemistry||US||28.04.2016|
||14988895||The Board of Trustees of the University of Illinois||Lynford Goddard|
Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. An electrical potential is applied across the interface of the semiconductor and the solution with a specified temporal profile relative to the temporal profile of the spatial pattern of illumination. Such methods are applied to the fabrication of a photodetector integral with a parabolic reflector, cell size sorting chips, a three-dimensional photonic bandgap chip, a photonic integrated circuit, and an integrated photonic microfluidic circuit.
20160118416 DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRONIC DEVICE||US||28.04.2016|
||14922658||Semiconductor Energy Laboratory Co., Ltd.||Shunpei YAMAZAKI|
A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.
20160118440 Photo-Induced MSM Stack||US||28.04.2016|
||14524801||Intermolecular, Inc.||Kevin Kashefi|
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.
20160118508 Method for Producing a Solar Cell||US||28.04.2016|
||14892084||INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ e.V.||Robert BOCK|
The invention relates to a method for producing a solar cell composed of crystalline silicon, as well as a solar cell of said type. The substrate of said solar cell has, in a first surface, a first doping region produced by boron diffusion and, in a second surface, a phosphorus-doped second doping region.
20160118514 SOLAR CELL, SOLAR CELL PANEL, AND SOLAR CELL FILM||US||28.04.2016|
||14920258||KABUSHIKI KAISHA TOSHIBA||Yongfang LI|
According to one embodiment, a solar cell includes a first electrode, a photoelectric conversion film, a second electrode, and a first electret. The photoelectric conversion film is provided on the first electrode. The photoelectric conversion film includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is of a second conductivity type and provided on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer generate a built-in electric field. The second electrode is provided on the photoelectric conversion film. The first electret is arranged with the photoelectric conversion film in a stacking direction of the first semiconductor layer and the second semiconductor layer. The first electret generates an external electric field. The external electric field and the built-in electric field are oriented toward the same side.
20160118515 BACK CONTACT TYPE SOLAR BATTERY CELL||US||28.04.2016|
||14892845||SHIN-ETSU CHEMICAL CO., LTD.||Chikara MORI|
A back contact type solar battery which provides a reduced electric power loss, free positioning of a bus bar, and a simple manufacturing process. The solar battery includes: semiconductor substrate; first conductivity type region formed on back surface side located on the opposite side of acceptance surface side of the semiconductor substrate; second conductivity type region formed on the back surface side of the semiconductor substrate; first conductivity type collecting electrode linearly formed on the first conductivity type region; and second conductivity type collecting electrode linearly formed on the second conductivity type region. The first and second conductivity type regions are alternately arranged. Each of the first and second conductivity type collecting electrodes has discontinuous places. The discontinuous places of each conductivity type are substantially aligned on straight line in arrangement direction in which the first and second conductivity type regions are alternately arranged.
20160118516 PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS||US||28.04.2016|
||14989989||SunPower Corporation||Gabriel HARLEY|
Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.
20160118520 METHODS OF HERMETICALLY SEALING PHOTOVOLTAIC MODULES||US||28.04.2016|
||14986983||Markus Eberhard Beck||Markus Eberhard Beck|
In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet, and a second glass sheet, a gap being defined between the first and second glass sheets, disposing a glass powder within the gap, and heating the powder to seal the glass sheets.
20160118519 THIN FILM SOLAR CELL PANEL AND MANUFACTURING METHOD THEREOF||US||28.04.2016|
||14889847||SHANGHAI SOLAR INVESTMENT MANAGEMENT PARTNER SHIPS LIMITED PARTNER SHIPS||Liyou YANG|
The present invention provides a thin film solar cell panel and a manufacturing method thereof. The thin film solar cell panel comprises a substrate, a first electrode disposed on the substrate. The substrate is an ultra-thin glass substrate with a thickness of 0.1-1 mm. The ultra-thin glass substrate has a bending capacity, and a minimum bending radius thereof reaches below 10 cm. The first electrode is continuously disposed on the substrate during its formation. Light transmittance of the thin film solar cell panel of the present invention is enhanced, and the thin film solar cell panel can be conveniently used to manufacture a bending solar cell component.