20160308076 SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD||US||20.10.2016|
||15185289||Panasonic Intellectual Property Management Co., Ltd.||Shigeharu TAIRA|
In a method for manufacturing a solar cell, a photoelectric conversion element, which has a surface whose outer periphery is surrounded by a plurality of sides, and a coating having light diffusivity are prepared. The coating is applied to an outer peripheral area of the surface by screen printing in a direction from a lower side, which is one of the sides, toward an upper side, which is one of the sides and which is opposed to the lower side such that an application amount of the coating to be applied along the lower side is smaller than an application amount of the coating to be applied along the upper side.
20160308078 METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE||US||20.10.2016|
||15196652||First Solar, Inc.||Oleh P. Karpenko|
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.
20160308079 SOLAR CELL AND PRODUCTION METHOD THEREFOR, AND SOLAR CELL MODULE||US||20.10.2016|
||15033230||KANEKA CORPORATION||Daisuke Adachi|
A photoelectric conversion section of a solar cell has a first electrode layer and a collecting electrode that are formed in this order on a first principal surface, and has a second electrode layer that is formed on a second principal surface. The collecting electrode includes a first electroconductive layer, an insulating layer, and a second electroconductive layer in this order on the first electrode layer. The first and second electroconductive layers are electrically connected via an opening section in the insulating layer. At peripheral edge of the first and second principal surfaces, the photoelectric conversion section has an insulating region excluding the first or second electrode layer. On the side of the principal surface having no insulating region, the first or second electrode layer is formed up to the peripheral end of the relevant principal surface.
20160308080 SOLAR CELL AND MANUFACTURING METHOD THEREOF||US||20.10.2016|
||15192037||FUJITSU LIMITED||Kenichi KAWAGUCHI|
A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.
20160308081 SOLAR CELL MODULE||US||20.10.2016|
||15091328||Panasonic Intellectual Property Management Co., Ltd.||Tasuku Ishiguro|
A solar cell module is provided with: a first encapsulant that is provided between a plurality of solar cells and a first protective member; a second encapsulant that comprises a different material to that of the first encapsulant and that is provided between the solar cells and a second protective member; and a third encapsulant that comprises the same material as the first encapsulant and that is provided between the solar cells and a output wiring member.
20160308082 SOLAR CELL MODULE||US||20.10.2016|
||15191529||Panasonic Intellectual Property Management Co., Ltd.||Yousuke ISHII|
Provided is a solar cell module which includes: a first solar cell group and a second solar cell group each including solar cells connected by a line member; a front surface member disposed on a front surface side of the first and second solar cell groups; a back surface member disposed on a back surface side of the first and second solar cell groups; one or more first terminal boxes and one or more second terminal boxes which are disposed on a back surface side of the back surface member; and an external line disposed on the back surface side of the back surface member and electrically connecting at least one first terminal box among the one or more first terminal boxes and at least one second terminal box among the one or more second terminal boxes.
20160308083 SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME||US||20.10.2016|
||15189384||LG ELECTRONICS INC.||Junyong AHN|
A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
20160308086 Method of Manufacturing Thin-Film Solar Cells with a p-Type CdTe Layer||US||20.10.2016|
||14687938||China Triumph International Engineering Co., Ltd.||Krishnakumar Velappan|
The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer thickness. The method according to the present invention is an efficient way to prevent shunting of the solar cells, to improve reliability and long-term stability of the solar cells and to provide a uniform doping of the CdTe layer. This is achieved by applying a sacrificial doping layer between a first CdTe layer having large grains and a second CdTe layer having small grains, which together form the CdTe layer of the solar cells. Furthermore it provides the possibility to eliminate the CdCl2 activation treatment step in case the sacrificial doping layer comprises a halogen.
20160308087 BUFFER LAYER DEPOSITION FOR THIN-FILM SOLAR CELLS||US||20.10.2016|
||15193921||Global Solar Energy, Inc.||Jeffrey S. BRITT|
Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.
WO/2016/165810 SOL-GEL-BASED PRINTABLE AND PARASITIC DIFFUSION-INHIBITING DOPING MEDIA FOR LOCAL DOPING OF SILICON WAFERS||WO||20.10.2016|
||PCT/EP2016/000516||MERCK PATENT GMBH||DOLL, Oliver|
The present invention relates to a novel printable paste in the form of a hybrid gel on the basis of inorganic oxide precursors which can be used in a simplified process for the production of solar cells
, the hybrid gel according to the invention functioning as a doping medium as well as a diffusion barrier.